1EDN8511BXUSA1 vs 1EDN7511B Vergleich
Detaillierter Direktvergleich von 1EDN8511BXUSA1 von Infineon und 1EDN7511B von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 1EDN8511BXUSA1 | 1EDN7511B |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,54 | $0,38 |
| Channel Count | 1 | — |
| Driver Configuration | Low-side | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 8 A | 8 A |
| Input Stage | Inverting and non-inverting | — |
| Propagation Delay Accuracy | [DATA_NEEDED: typical propagation delay] | — |
| UVLO Threshold | 8 V | — |
| Driver Supply Voltage (VCC) | [DATA_NEEDED: VCC range upper limit] | — |
| Betriebs-Sperrschichttemperatur | -40 °C to +150 °C | — |
| Gehäuse | PG-SOT23-6-2 | SOT-23-6 (PG-SOT23-6-2) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 6 | — |
| Logic Input Compatibility | TTL / CMOS | — |
| Target Switch Type | Power MOSFET, GaN HEMT | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Driver Type | — | Single-channel low-side gate driver |
| Number of Channels | — | 1 |
| Supply Voltage (VCC) | — | 4.5 V to 20 V |
| UVLO Threshold (logic-level variant) | — | 1.9 V to 2.3 V |
| UVLO Threshold (normal-level variant) | — | 800 mV to 1.2 V (typ) |
| Propagation Delay | — | 4.5 ns (typ) |
| Rise Time (typ) | — | 19 ns |
| Fall Time (typ) | — | 19 ns |
| Output On-Resistance (pull-up) | — | 0.85 ohm |
| Output On-Resistance (pull-down) | — | 0.35 ohm |
| Input Logic | — | Inverting + Non-inverting |
| Betriebstemperatur | — | -40 C to +150 C |
| Supported Switches | — | MOSFET (OptiMOS, CoolMOS), GaN HEMT |