2ED21844S06JXUMA1 vs 6EDL04N02PRXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 2ED21844S06JXUMA1 sa pamamagitan ng Infineon at 6EDL04N02PRXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
2ED21844S06JXUMA1 - 650V Half-Bridge Gate Driver 2.5A | Infineon
2ED21844S06JXUMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | 2ED21844S06JXUMA1 | 6EDL04N02PRXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Driver Configuration | Half-Bridge | Half-bridge (3 high-side + 3 low-side) |
| Number of Drivers | 2 (high-side + low-side) | — |
| Input Type | Non-Inverting | — |
| Blocking Voltage (Voffset) | 650 V | — |
| Output Current (Source/Sink) | 2.5 A typical | — |
| Bootstrap Diode | Integrated | Integrated (BSD) on all 3 high-side drivers |
| Supply Voltage (VCC) | 10 V to 20 V [DATA_NEEDED: exact range] | — |
| Propagation Delay (Typ.) | 200 ns [DATA_NEEDED: matching value] | — |
| Input Logic Compatibility | TTL/CMOS 3.3 V and 5 V | CMOS / LSTTL, 3.3 V and 5 V |
| Undervoltage Lockout (UVLO) | Yes, both HS and LS rails | — |
| Shutdown Pin | Yes | — |
| Negative VS Transient Immunity | -100 V typical | — |
| Hanay ng Temperature na Operasyon | -40 C to +125 C | -40 °C to +125 °C |
| Packhaging | PG-DSO-14-49 (DSO-14) | PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL level] | MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level]) |
| Tindminan RoHS | Compliant | Compliant |
| Product Type | — | 3-Phase Gate Driver IC |
| Maximum Blocking Voltage | — | +180 V (VS referenced to GND for high side) |
| Rated Supply Voltage (VCC) | — | 200 V class (operating range 10 V to 20 V on VCC) |
| Source Current (typ.) | — | 0.375 A |
| Sink Current (typ.) | — | 0.75 A |
| Over-Current Protection | — | Yes (single-shunt, ITRIP/CIN pin) |
| Enable Pin (EN) | — | Yes (active-high) |
| Fault Output (nFAULT) | — | Yes (active-low, open-drain) |
| Interlocking / Anti-shoot-through | — | Yes (built-in per phase pair) |
| Process Technology | — | Thin-film SOI (Silicon-On-Insulator) |
| Maximum Junction Temperature | — | +150 °C |
| Target Switches | — | MOSFETs up to 180 V, IGBTs up to 180 V |