2ED21844S06JXUMA1 vs 6EDL04N02PRXUMA1 तुलना
विस्तृत दोनों ओर की तुलना 2ED21844S06JXUMA1 द्वारा Infineon और 6EDL04N02PRXUMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
2ED21844S06JXUMA1 - 650V Half-Bridge Gate Driver 2.5A | Infineon
2ED21844S06JXUMA1 ✓ सक्रिय
विशेषता तुलना
| पैरामीटर | 2ED21844S06JXUMA1 | 6EDL04N02PRXUMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | Power MOSFET Drivers | Power MOSFET Drivers |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Driver Configuration | Half-Bridge | Half-bridge (3 high-side + 3 low-side) |
| Number of Drivers | 2 (high-side + low-side) | — |
| Input Type | Non-Inverting | — |
| Blocking Voltage (Voffset) | 650 V | — |
| Output Current (Source/Sink) | 2.5 A typical | — |
| Bootstrap Diode | Integrated | Integrated (BSD) on all 3 high-side drivers |
| Supply Voltage (VCC) | 10 V to 20 V [DATA_NEEDED: exact range] | — |
| Propagation Delay (Typ.) | 200 ns [DATA_NEEDED: matching value] | — |
| Input Logic Compatibility | TTL/CMOS 3.3 V and 5 V | CMOS / LSTTL, 3.3 V and 5 V |
| Undervoltage Lockout (UVLO) | Yes, both HS and LS rails | — |
| Shutdown Pin | Yes | — |
| Negative VS Transient Immunity | -100 V typical | — |
| ऑपरेटिंग तापमान रेंज | -40 C to +125 C | -40 °C to +125 °C |
| पैकेज | PG-DSO-14-49 (DSO-14) | PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| MSL स्तर | [DATA_NEEDED: MSL level] | MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level]) |
| RoHS स्थिति | Compliant | Compliant |
| Product Type | — | 3-Phase Gate Driver IC |
| Maximum Blocking Voltage | — | +180 V (VS referenced to GND for high side) |
| Rated Supply Voltage (VCC) | — | 200 V class (operating range 10 V to 20 V on VCC) |
| Source Current (typ.) | — | 0.375 A |
| Sink Current (typ.) | — | 0.75 A |
| Over-Current Protection | — | Yes (single-shunt, ITRIP/CIN pin) |
| Enable Pin (EN) | — | Yes (active-high) |
| Fault Output (nFAULT) | — | Yes (active-low, open-drain) |
| Interlocking / Anti-shoot-through | — | Yes (built-in per phase pair) |
| Process Technology | — | Thin-film SOI (Silicon-On-Insulator) |
| Maximum Junction Temperature | — | +150 °C |
| Target Switches | — | MOSFETs up to 180 V, IGBTs up to 180 V |