2ED2304S06FXUMA1 vs 2ED2304S06F Comparison

Detailed side-by-side comparison of 2ED2304S06FXUMA1 by Infineon and 2ED2304S06F by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
2ED2304S06FXUMA1 2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 ✓ Active

Specification Comparison

Parameter 2ED2304S06FXUMA1 2ED2304S06F
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.98
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Technology Infineon thin-film SOI Infineon thin-film SOI (Silicon-On-Insulator)
Blocking Voltage (High-Side) 650 V —
Source Current (typ.) 0.36 A 0.36 A
Sink Current (typ.) 0.7 A 0.7 A
Input Logic Compatibility 3.3 V CMOS / LSTTL (Schmitt-trigger) —
VCC Supply Range 10 V to 17 V —
Bootstrap Diode Integrated (BSD) —
Undervoltage Lockout (UVLO) Yes (VCC and VB-VS) —
Interlock / Anti-Shoot-Through Built-in —
Propagation Delay (typ.) 200 ns —
Operating Temperature Range -40C to +125C —
Package PG-DSO-8-910 (DSO-8) PG-DSO-8-910 (DSO-8)
Mounting Type Surface Mount Surface Mount
MSL Level 2 —
RoHS Status Compliant Compliant
Product Type — Half-Bridge Gate Driver IC
Topology — High-side + Low-side, half-bridge
Maximum Blocking Voltage (High-Side) — 650 V
Integrated Bootstrap Diode — Yes
Logic Input Compatibility — 3.3 V CMOS / LSTTL (Schmitt trigger with hysteresis, pull-down)
Input Pins — LIN (low-side in), HIN (high-side in)
Shoot-Through Protection — Built-in interlock logic
Pin Count — 8
Target Power Devices — IGBTs and power MOSFETs
Operating Temperature — [DATA_NEEDED: operating temperature range]

Datasheets & Resources

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