2ED2304S06FXUMA1 vs 2ED2304S06F 对比

详细并排对比 2ED2304S06FXUMA1 出自 Infineon 和 2ED2304S06F 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2304S06FXUMA1 2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 ✓ 量产中

规格对比

参数 2ED2304S06FXUMA1 2ED2304S06F
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.66 $0.98
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Technology Infineon thin-film SOI Infineon thin-film SOI (Silicon-On-Insulator)
Blocking Voltage (High-Side) 650 V —
Source Current (typ.) 0.36 A 0.36 A
Sink Current (typ.) 0.7 A 0.7 A
Input Logic Compatibility 3.3 V CMOS / LSTTL (Schmitt-trigger) —
VCC Supply Range 10 V to 17 V —
Bootstrap Diode Integrated (BSD) —
Undervoltage Lockout (UVLO) Yes (VCC and VB-VS) —
Interlock / Anti-Shoot-Through Built-in —
Propagation Delay (typ.) 200 ns —
工作温度范围 -40C to +125C —
封装 PG-DSO-8-910 (DSO-8) PG-DSO-8-910 (DSO-8)
安装类型 Surface Mount Surface Mount
MSL 等级 2 —
RoHS 状态 Compliant Compliant
Product Type — Half-Bridge Gate Driver IC
拓扑 — High-side + Low-side, half-bridge
Maximum Blocking Voltage (High-Side) — 650 V
Integrated Bootstrap Diode — Yes
Logic Input Compatibility — 3.3 V CMOS / LSTTL (Schmitt trigger with hysteresis, pull-down)
Input Pins — LIN (low-side in), HIN (high-side in)
Shoot-Through Protection — Built-in interlock logic
引脚数量 — 8
Target Power Devices — IGBTs and power MOSFETs
工作温度 — [DATA_NEEDED: operating temperature range]

数据手册与资源

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