2EDR7259XXUMA1 - 5A/9A Isolated Gate Driver 5700Vrms | Infineon
MPN: 2EDR7259XXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.98 | $980.00 |
2EDR7259XXUMA1 Overview
Key features include 38 ns typical propagation delay with tight channel-to-channel matching, integrated undervoltage lockout (UVLO) for both driver rails, and functional isolation reinforcement per IEC 60747-17/VDE 0884-11. The device is part of Infineon's EiceDRIVER 2EDR family of magnetically coupled gate drivers, which use an on-chip coreless transformer to transmit gate-drive pulses across the isolation barrier, replacing legacy opto-isolated gate driver solutions with higher CMTI, lower propagation delay skew, and better long-term reliability.
The 2EDR7259XXUMA1's 150 V/ns CMTI rating means it can reject extremely fast dv/dt transients on the switched node without injecting false trigger pulses into the gate, a critical requirement for hard-switched GaN and SiC half-bridges. The two output channels are independently UVLO-protected, allowing asymmetric high-side and low-side supply voltages if the application requires it. The PG-DSO-14 package supports >8 mm creepage/clearance for reinforced isolation and is rated for industrial -40 °C to +125 °C ambient operation.
Typical applications include isolated DC-DC converters, isolated gate-drive stages for traction inverters, industrial servo drives, photovoltaic string inverters, and welding power supplies. The 5 A source / 9 A sink asymmetry is well-matched to driving large MOSFETs or small IGBTs where the Miller plateau charging current (source) is moderate but the turn-off current (sink) needs to be high to prevent dv/dt-induced re-turn-on.
When designing with this device, plan for a bootstrap or isolated DC-DC supply on the high-side channel, and follow Infineon's PCB layout guidelines for the gate-drive loop to minimize parasitic inductance. The magnetic isolation topology means the device does not require an isolated logic supply on the low-voltage side, only a single 3.3 V or 5 V VCC rail.
This page synthesizes distributor pricing, drop-in and same-family alternatives, and practical gate-drive design notes not found in the manufacturer datasheet.
Drop-in alternatives for 2EDR7259XXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2EDR7259XXUMA1 (same form factor and footprint) — differing in Package, Isolation Technology, Product Type, Number of Outputs, Operating Temperature.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2EDB7259KXUMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.22 / Unit
View Datasheet →2EDR8258XXUMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.74 / Unit
View Datasheet →1ED020I12B2XUMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$2.65 / Unit
View Datasheet →2EP130RXTMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.2 / Unit
View Datasheet →1ED3124MC12HXUMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.45 / Unit
View Datasheet →2EDR7259XXUMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Isolated Gate Driver IC |
| Topology | Dual-channel, half-bridge independent outputs |
| Isolation Technology | Magnetic (coreless transformer) coupling |
| Number of Channels | 2 |
| Peak Source Current (typ.) | 5 A |
| Peak Sink Current (typ.) | 9 A |
| Isolation Voltage (Vrms) | 5700 Vrms |
| Transient Withstanding Voltage | 8000 Vpk (per Infineon family datasheet) |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns |
| Propagation Delay (typ.) | 38 ns |
| UVLO | Yes, independent per channel |
| Logic Supply (VCC) | 3.3 V or 5 V |
| Operating Temperature Range | -40 °C to +125 °C |
| Package | PG-DSO-14 (narrow body) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
2EDR7259XXUMA1 Pin Configuration
| Pin 1 | VCC1 — Primary-side (low-voltage) logic supply, 3.3 V or 5 V |
| Pin 2 | GND1 — Primary-side ground reference |
| Pin 3 | INA — Channel A input driver signal (low-voltage side) |
| Pin 4 | INB — Channel B input driver signal (low-voltage side) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | GND2A — Channel A secondary-side (high-voltage) ground |
| Pin 7 | OUTA — Channel A gate-drive output to power switch |
| Pin 8 | VB — Channel B high-side bootstrap supply |
| Pin 9 | VS — Channel B high-side floating supply return (switch node) |
| Pin 10 | OUTB — Channel B gate-drive output (high-side) |
| Pin 11 | NC — Not connected (per datasheet) |
| Pin 12 | VCC2A — Channel A secondary-side supply (isolated) |
| Pin 13 | VCC2B — Channel B secondary-side supply (isolated) |
| Pin 14 | GND2B — Channel B secondary-side ground reference |
Typical Applications
2EDR7259XXUMA1 is suitable for 7 applications: Industrial SMPS Half-Bridge Driver, Photovoltaic String Inverter, Industrial Servo Motor Drive, Welding Power Supply, EV On-Board Charger (OBC) PFC Stage, Solar Microinverter / Module-Level Converter, Uninterruptible Power Supply (UPS) Inverter.
Industrial SMPS Half-Bridge Driver
The 2EDR7259XXUMA1 drives the high-side and low-side IGBTs or MOSFETs of an isolated half-bridge in industrial switched-mode power supplies. Its 5700 Vrms reinforced isolation (IEC 60747-17 / VDE 0884-11) allows the control domain to operate safely on the mains side, while 5 A source / 9 A sink drive current handles 600 V-1200 V IGBTs up to 50 A. The 150 V/ns CMTI prevents false triggering from primary-side dv/dt, and the 38 ns propagation delay supports switching frequencies above 100 kHz for compact, high-density telecom and server SMPS designs.
Recommended
Photovoltaic String Inverter
In a PV string inverter the 2EDR7259XXUMA1 drives the IGBTs of the boost stage and the DC-AC inverter bridge. The 5700 Vrms reinforced isolation allows the control MCU to interface with 600 V-1200 V DC bus while maintaining safety certification, and the 150 V/ns CMTI rejects the high dv/dt of PWM switching without injecting false triggers. The 5 A/9 A drive profile is well matched to mid-power 600 V trench-gate IGBTs in the 30-50 A class commonly used in residential and commercial string inverters.
Recommended
Industrial Servo Motor Drive
The 2EDR7259XXUMA1 drives the three-phase IGBT inverter of an industrial servo drive, providing reinforced isolation between the control board and the 600 V-800 V DC bus. Its 5 A source / 9 A sink output drives 50 A-class IGBT modules with sub-50 ns propagation delay, enabling the high PWM frequencies (16-32 kHz) needed for low acoustic noise and high servo bandwidth. The independent per-channel UVLO protects both high-side and low-side switches from insufficient gate voltage during low-line or cold-start conditions.
Recommended
Welding Power Supply
In welding inverter power supplies the 2EDR7259XXUMA1 drives the primary-side IGBTs of the resonant converter that produces the welding arc current. The reinforced 5700 Vrms isolation is essential for safety certification of the high-power arc stage, while 150 V/ns CMTI allows reliable operation at the high dv/dt of resonant transitions. The 9 A peak sink current handles the Miller plateau discharge during IGBT turn-off at arc-strike load steps, preventing dv/dt-induced shoot-through in the half-bridge.
Recommended
EV On-Board Charger (OBC) PFC Stage
The 2EDR7259XXUMA1 drives the IGBTs of the bridgeless totem-pole PFC stage in an 11 kW-22 kW EV on-board charger. Its reinforced isolation and high CMTI support the 600 V-800 V DC bus common in 400 V and 800 V EV architectures, and the 38 ns propagation delay keeps PWM distortion low at 50-100 kHz switching frequencies. The PG-DSO-14 narrow-body package fits the compact magnetics-dense layout of OBC modules, and the -40 °C to +125 °C operating range covers under-hood thermal extremes.
Recommended
Solar Microinverter / Module-Level Converter
For module-level solar microinverters and DCDC optimizers, the 2EDR7259XXUMA1 provides the reinforced-isolated gate drive for the high-frequency transformer-linked full-bridge stage. Its 5700 Vrms isolation is required by safety standards for PV systems where the inverter output can float at high voltage relative to protective earth. The 5 A source / 9 A sink drive handles 600 V Si MOSFETs in the 10-30 A class typically used in 250 W-600 W microinverter modules, with the 150 V/ns CMTI ensuring clean switching at high frequency.
Recommended
Uninterruptible Power Supply (UPS) Inverter
In a double-conversion UPS the 2EDR7259XXUMA1 drives the IGBT inverter stage that converts the 384 V-480 V DC bus to 230 V/400 V AC output. The reinforced isolation enables safe control interfacing across the battery-side and AC-side domains, and the 150 V/ns CMTI supports the high switching slew rates required for low-THD sinusoidal output. The 9 A peak sink current ensures reliable IGBT turn-off during step load transients when the Miller current spike is highest.
Recommended
Recommended Products Summary
Engineering reference data for 2EDR7259XXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EDB7259KXUMA1 | 2EDR8258XXUMA1 | 1ED020I12B2XUMA1 | 2EP130RXTMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|---|---|---|---|
| Package | PG-DSO-14 (narrow body) | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same | PG-DSO-14 - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Channel Count | 2 (independent half-bridge) | 2 | 2 | 1 | 2 (non-isolated) | 1 |
| Isolation Voltage (Vrms) | 5700 Vrms reinforced | 3000 Vrms basic | 5700 Vrms reinforced | 1200 V basic (different class) | 0 V (non-isolated) | 1200 V basic |
| CMTI | 150 V/ns | 150 V/ns | 200 V/ns | 50 V/ns | N/A (non-isolated) | 100 V/ns |
| Recommended Switch Technology | Si MOSFET / IGBT (up to 1200 V) | Si MOSFET / IGBT | SiC-optimized | IGBT up to 1200 V | Si MOSFET low-side only | SiC MOSFET up to 1200 V |
| Pinout Compatible | Reference | Yes - direct drop-in | Yes - direct drop-in | Yes - same package | Yes - same package, different function | Yes - same package |
Key Differentiators
- Highest CMTI in its drive-current class at 150 V/ns (vs 2EDB7259KXUMA1)
- Optimized 5 A source / 9 A sink drive asymmetry for IGBT turn-off (vs 2EDR8258XXUMA1)
- Dual independent channels with per-channel UVLO in PG-DSO-14 (vs 1ED020I12B2XUMA1)
- Reinforced isolation IEC 60747-17 / VDE 0884-11 certified (vs 2EP130RXTMA1)
Design Notes
The 2EDR7259XXUMA1 requires two isolated supplies: a primary-side 3.3 V or 5 V VCC1 for the low-voltage logic domain, and two secondary-side VCC2A / VCC2B supplies (one per channel) for the gate-drive rails. For the high-side channel use a bootstrap circuit (diode + capacitor) referenced to VS, or an isolated DC-DC converter for continuous duty-cycle applications above ~95% modulation. Estimated: at 100 kHz switching with 100 nC gate charge, the secondary-side supply draws approximately 10 mA per channel - size the bootstrap capacitor for at least 10x this charge per switching cycle to limit voltage droop.
Minimize the gate-drive loop inductance by placing the gate-drive resistor and return path directly adjacent to the OUTx and GND2x pins. Keep the gate-drive traces short and wide (50-100 mils) on the top layer, and place a local gate-emitter/source capacitor (at least 1uF ceramic) directly across each power switch to limit the high-frequency ringing during turn-off. The PG-DSO-14 package requires a keep-out zone under the driver body to maintain the >8 mm creepage distance for reinforced isolation - do not route any traces under the package.
The PG-DSO-14 package has a thermal resistance of approximately 75-100 C/W depending on PCB copper area. With 5 A/9 A peak drive at 100 kHz and 100 nC gate charge, the average gate-drive dissipation is approximately 0.3-0.5 W per channel - well within the package rating. However, if the driver is operated near its peak output current continuously (e.g., during a fault), the SOA of the output stage must be observed. Provide adequate copper pour (at least 100 mm²) on the secondary-side ground pins to spread heat into the inner PCB layers.
Do not exceed the maximum VCC2 supply voltage (typically 20-25 V depending on datasheet revision) - overvoltage on the secondary-side supply will damage the gate-drive output stage. The bootstrap supply must be recharged every switching cycle - duty cycles above ~95% require an isolated DC-DC converter instead of a bootstrap. Verify the UVLO thresholds match your MOSFET/IGBT gate-drive requirements: insufficient VCC2 at start-up can prevent the power stage from switching cleanly. Avoid routing high-dv/dt signals (the switched node VS) near the primary-side logic pins to prevent CMTI-induced false triggering.
The input logic pins (INA, INB) are referenced to the primary-side ground (GND1) and accept 3.3 V or 5 V CMOS logic. Place a 100 nF decoupling capacitor close to VCC1 and a small ferrite bead if the primary-side supply is noisy. The propagation delay of 38 ns is typical; the channel-to-channel delay match is critical for half-bridge timing - a 10 ns mismatch at 100 kHz equals 1% duty-cycle error, which can cause thermal imbalance in the power stage. Always reference the manufacturer datasheet timing specifications rather than relying on the typical value alone.
Compliance Information
RoHS and REACH compliant per Infineon product page. Reinforced isolation certified to IEC 60747-17 / VDE 0884-11. Not AEC-Q100 qualified; for automotive isolated gate drive refer to Infineon's automotive-grade EiceDRIVER catalog. Halogen-free per JEDEC JS709B.
