AS4C512M16D4B-62BCNTR vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of AS4C512M16D4B-62BCNTR by Alliance Memory and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4B-62BCNTR ✓ ActiveSamsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ ActiveSpecification Comparison
| Parameter | AS4C512M16D4B-62BCNTR | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Alliance Memory | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (512M x 16) | — |
| Data Rate | 3200 MT/s | 2666 Mbps |
| Clock Frequency | 1600 MHz | — |
| CAS Latency | 19 ns | [DATA_NEEDED: CAS Latency] |
| Supply Voltage | 1.2 V (1.14V to 1.26V) | — |
| Interface | Parallel | DDR4 (parallel, double data rate) |
| Package | 96-FBGA (7.5x13 mm) | 96FBGA |
| Operating Temperature | 0°C to 95°C | 0C to +85C |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| JEDEC Standard | Compliant | — |
| Organization | 512M x 16 | 512M x 16 |
| Revision | Rev.B | — |
| RoHS Status | Compliant | Compliant (per JLCPCB listing: ROHS) |
| Lead-Free | Yes | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Die Generation | — | B-die |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |