AS4C512M16D4B-62BCNTR vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of AS4C512M16D4B-62BCNTR by Alliance Memory and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C512M16D4B-62BCNTR
AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4B-62BCNTR β Active
Specification Comparison
| Parameter | AS4C512M16D4B-62BCNTR | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Alliance Memory | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $37.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (512M x 16) | β |
| Data Rate | 3200 MT/s | 2666 Mbps/pin (PC4-2666) |
| Clock Frequency | 1600 MHz | β |
| CAS Latency | 19 ns | [DATA_NEEDED: CL value] |
| Supply Voltage | 1.2 V (1.14V to 1.26V) | 1.2 V |
| Interface | Parallel | β |
| Package | 96-FBGA (7.5x13 mm) | 96-ball FBGA |
| Operating Temperature | 0Β°C to 95Β°C | 0Β°C to +95Β°C (TC) |
| Mounting Type | Surface Mount | β |
| JEDEC Standard | Compliant | β |
| Organization | 512M x 16 | 512M x 16 |
| Revision | Rev.B | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Total Density | β | 8 Gb |
| tRCD | β | [DATA_NEEDED: tRCD value] |
| tRP | β | [DATA_NEEDED: tRP value] |
| Refresh | β | Auto-refresh, self-refresh |
| On-Die Termination | β | Yes (ODT) |
| ZQ Calibration | β | Yes |
| Data Mask | β | Yes |
| RoHS | β | Compliant |