AS4C512M16D4B-62BCNTR vs K4A8G165WB-BCTD 比較
詳細並排比較 AS4C512M16D4B-62BCNTR 由 Alliance Memory 與 K4A8G165WB-BCTD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Alliance Memory
AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4B-62BCNTR ✓ 啟用中Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ 啟用中規格比較
| 參數 | AS4C512M16D4B-62BCNTR | K4A8G165WB-BCTD |
|---|---|---|
| 品牌 | Alliance Memory | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit (512M x 16) | — |
| 資料速率 | 3200 MT/s | 2666 Mbps |
| Clock Frequency | 1600 MHz | — |
| CAS 延遲 | 19 ns | [DATA_NEEDED: CAS Latency] |
| 供應電壓 | 1.2 V (1.14V to 1.26V) | — |
| 介面 | Parallel | DDR4 (parallel, double data rate) |
| 封裝 | 96-FBGA (7.5x13 mm) | 96FBGA |
| 工作溫度 | 0°C to 95°C | 0C to +85C |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| JEDEC Standard | Compliant | — |
| 組織 | 512M x 16 | 512M x 16 |
| Revision | Rev.B | — |
| RoHS 狀態 | Compliant | Compliant (per JLCPCB listing: ROHS) |
| Lead-Free | Yes | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Die Generation | — | B-die |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |