AUIRF7769L2TR vs AUIRF7640S2TR Comparison
Detailed side-by-side comparison of AUIRF7769L2TR by Infineon and AUIRF7640S2TR by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
AUIRF7769L2TR - 100V 3.5mΞ© 375A Automotive DirectFET MOSFET | Infineon
AUIRF7769L2TR β ActiveInfineon
AUIRF7640S2TR
AUIRF7640S2TR - 60V 21A DirectFET MOSFET for Class D | Infineon
AUIRF7640S2TR β ActiveSpecification Comparison
| Parameter | AUIRF7769L2TR | AUIRF7640S2TR |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.78 | $1.18 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 100 V | β |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub> | 375 A | β |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10V | 3.5 mΞ© (typical) | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: V_GS(th) typical value] | β |
| Power Dissipation at T<sub>C</sub> | 125 W | β |
| Power Dissipation at T<sub>A</sub> | 3.3 W | β |
| Package | DirectFET Isometric L8 (DPAK footprint) | DirectFET SB (Surface Mount) |
| Profile Height | 0.7 mm | β |
| Technology | Automotive HEXFET Power MOSFET (trench) | HEXFET Power MOSFET (Automotive Grade) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: min/max junction temperature] | -40C to +150C [DATA_NEEDED: junction temp upper limit] |
| Gate Charge (Q<sub>g</sub>) | [DATA_NEEDED: total gate charge] | β |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 (Automotive Grade per datasheet) |
| RoHS Status | Compliant | Compliant [DATA_NEEDED: confirmed in datasheet] |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) @ TA=25C | β | 5.8 A |
| Continuous Drain Current (ID) @ TC=25C | β | 21 A |
| Power Dissipation (PD) @ TA=25C | β | 2.4 W |
| Power Dissipation (PD) @ TC=25C | β | 30 W |
| On-Resistance RDS(on) | β | 36 mΞ© |
| Total Gate Charge (Qg) | β | 7.3 nC |
| Primary Application | β | Automotive Class D audio amplifier output stage |