AUIRF7769L2TR vs AUIRF7640S2TR Perbandingan

Perbandingan bersamaan detil AUIRF7769L2TR dari Infineon dan AUIRF7640S2TR dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum AUIRF7769L2TR AUIRF7640S2TR
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub> 375 A —
R<sub>DS(on)</sub> at V<sub>GS</sub>=10V 3.5 mΩ (typical) —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: V_GS(th) typical value] —
Power Dissipation at T<sub>C</sub> 125 W —
Power Dissipation at T<sub>A</sub> 3.3 W —
Paket DirectFET Isometric L8 (DPAK footprint) DirectFET SB (Surface Mount)
Profile Height 0.7 mm —
Technology Automotive HEXFET Power MOSFET (trench) HEXFET Power MOSFET (Automotive Grade)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: min/max junction temperature] -40C to +150C [DATA_NEEDED: junction temp upper limit]
Gate Charge (Q<sub>g</sub>) [DATA_NEEDED: total gate charge] —
Automotive Qualification AEC-Q100 qualified AEC-Q101 (Automotive Grade per datasheet)
Status RoHS Compliant Compliant [DATA_NEEDED: confirmed in datasheet]
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) @ TA=25C — 5.8 A
Continuous Drain Current (ID) @ TC=25C — 21 A
Power Dissipation (PD) @ TA=25C — 2.4 W
Power Dissipation (PD) @ TC=25C — 30 W
On-Resistance RDS(on) — 36 mΩ
Total Gate Charge (Qg) — 7.3 nC
Primary Application — Automotive Class D audio amplifier output stage

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon