AUIRF7769L2TR vs AUIRF7640S2TR 比較
詳細並排比較 AUIRF7769L2TR 由 Infineon 與 AUIRF7640S2TR 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | AUIRF7769L2TR | AUIRF7640S2TR |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub> | 375 A | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10V | 3.5 mΩ (typical) | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: V_GS(th) typical value] | — |
| Power Dissipation at T<sub>C</sub> | 125 W | — |
| Power Dissipation at T<sub>A</sub> | 3.3 W | — |
| 封裝 | DirectFET Isometric L8 (DPAK footprint) | DirectFET SB (Surface Mount) |
| Profile Height | 0.7 mm | — |
| Technology | Automotive HEXFET Power MOSFET (trench) | HEXFET Power MOSFET (Automotive Grade) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: min/max junction temperature] | -40C to +150C [DATA_NEEDED: junction temp upper limit] |
| Gate Charge (Q<sub>g</sub>) | [DATA_NEEDED: total gate charge] | — |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 (Automotive Grade per datasheet) |
| RoHS 狀態 | Compliant | Compliant [DATA_NEEDED: confirmed in datasheet] |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) @ TA=25C | — | 5.8 A |
| Continuous Drain Current (ID) @ TC=25C | — | 21 A |
| Power Dissipation (PD) @ TA=25C | — | 2.4 W |
| Power Dissipation (PD) @ TC=25C | — | 30 W |
| On-Resistance RDS(on) | — | 36 mΩ |
| Total Gate Charge (Qg) | — | 7.3 nC |
| Primary Application | — | Automotive Class D audio amplifier output stage |