BSC011N03LSATMA1 vs BSC020N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSC011N03LSATMA1 by Infineon and BSC020N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC011N03LSATMA1
BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon
BSC011N03LSATMA1 β ActiveInfineon
BSC020N03LSGATMA1
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC011N03LSATMA1 | BSC020N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 30V | β |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) at TA=25C | 37 A | β |
| Pulsed Drain Current (IDM) | 100 A (TC) | [DATA_NEEDED: pulsed drain current value] |
| On-State Resistance (RDS(on)) at VGS=10V | 1.1 mOhm (typ) | approximately 2.0 mOhm |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V (typ 1.6 V) | 1 V to 2.2 V (typical range, per datasheet) |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | β |
| Power Dissipation (PD) at TC=25C | 96 W | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C (junction) |
| Package | PG-TDSON-8-1 (SuperSO8) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 (per JEDEC J-STD-020, per Infineon datasheet) |
| RoHS Status | Compliant | Compliant |
| Series | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 28 A |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Power Dissipation (PD) at Ta=25C | β | 2.5 W |
| Power Dissipation (PD) at Tc=25C | β | 96 W |
| Package / Case | β | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) |
| Packaging | β | Tape & Reel |