BSC011N03LSATMA1 vs BSC020N03LSGATMA1 比較
詳細並排比較 BSC011N03LSATMA1 由 Infineon 與 BSC020N03LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ 啟用中規格比較
| 參數 | BSC011N03LSATMA1 | BSC020N03LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 30V | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TA=25C | 37 A | — |
| Pulsed Drain Current (IDM) | 100 A (TC) | [DATA_NEEDED: pulsed drain current value] |
| On-State Resistance (RDS(on)) at VGS=10V | 1.1 mOhm (typ) | approximately 2.0 mOhm |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V (typ 1.6 V) | 1 V to 2.2 V (typical range, per datasheet) |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation (PD) at TC=25C | 96 W | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 工作溫度範圍 | -55C to +150C | -55 C to +150 C (junction) |
| 封裝 | PG-TDSON-8-1 (SuperSO8) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | 1 (per JEDEC J-STD-020, per Infineon datasheet) |
| RoHS 狀態 | Compliant | Compliant |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 28 A |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc=25C | — | 96 W |
| 封裝 / 外殼 | — | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) |
| Packaging | — | Tape & Reel |