BSC011N03LSATMA1 vs BSC020N03LSGATMA1 Perbandingan

Perbandingan bersamaan detil BSC011N03LSATMA1 dari Infineon dan BSC020N03LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC011N03LSATMA1 BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC011N03LSATMA1 BSC020N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 30V —
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TA=25C 37 A —
Pulsed Drain Current (IDM) 100 A (TC) [DATA_NEEDED: pulsed drain current value]
On-State Resistance (RDS(on)) at VGS=10V 1.1 mOhm (typ) approximately 2.0 mOhm
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V (typ 1.6 V) 1 V to 2.2 V (typical range, per datasheet)
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation (PD) at TC=25C 96 W —
Power Dissipation (PD) at TA=25C 2.5 W —
Rentang Suhu Kerja -55C to +150C -55 C to +150 C (junction)
Paket PG-TDSON-8-1 (SuperSO8) —
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 1 (per JEDEC J-STD-020, per Infineon datasheet)
Status RoHS Compliant Compliant
Series — OptiMOS 3
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 28 A
Continuous Drain Current (ID) at Tc=25C — 100 A
Gate-Source Voltage (VGS) — +/-20 V
Power Dissipation (PD) at Ta=25C — 2.5 W
Power Dissipation (PD) at Tc=25C — 96 W
Paket / Case — PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm)
Packaging — Tape & Reel

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