BSC014N04LSTATMA1 vs BSC014N04LSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014N04LSTATMA1 disebabkan oleh Infineon dan BSC014N04LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC014N04LSTATMA1 BSC014N04LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC014N04LSTATMA1 —
Technology OptiMOS 5 (N-Channel Trench) Trench (OptiMOS 5, thin-wafer)
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) @ TA=25°C 33 A —
Continuous Drain Current (ID) @ TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R DS(on) max @ VGS=10V 1.45 mΩ —
R DS(on) typical @ VGS=10V [DATA_NEEDED: RDS(on) typical] —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 115 W —
Gambaran Suhu Operasi -55°C to +150°C -55C to +175C
Kemasan PG-TDSON-8 FL (SuperSO8 5x6) SuperSO8 (TDSON-8 FL) 5x6 mm
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Status RoHS Compliant Compliant
Aras MSL MSL1 1 (unlimited)
Lead-Free Yes —
Series — OptiMOS 5
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 32 A
Continuous Drain Current (ID) at Tc — 100 A
RDS(on) max at VGS=10 V — 1.4 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 96 W
Gate-Source Voltage (VGS) max — 20 V

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