BSC026N04LSATMA1 vs BSC014N04LSIATMA1 Comparison
Detailed side-by-side comparison of BSC026N04LSATMA1 by Infineon and BSC014N04LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC026N04LSATMA1
BSC026N04LSATMA1 - 40V N-Ch OptiMOS 2.6mΩ MOSFET | Infineon
BSC026N04LSATMA1 ✓ ActiveInfineon
BSC014N04LSIATMA1
BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon
BSC014N04LSIATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC026N04LSATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.39 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS™ 5 N-Channel Power MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS absolute maximum] |
| Continuous Drain Current (ID, Ta) | 23 A | 31 A |
| Continuous Drain Current (ID, Tc=25°C) | 100 A | — |
| Pulsed Drain Current (IDM, Tc=25°C) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 2.6 mΩ | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: max RDS(on)] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 63 W | — |
| Operating Temperature Range | -55°C to +150°C | -55 C to +150 C |
| Package | PG-TDSON-8-6 (TDSON 5x6 mm) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS™ 5 | OptiMOS 5 (trench, thin-wafer) |
| Channel Type | N-Channel | — |
| RoHS Status | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| MSL Level | — | 1 (per JEDEC J-STD-020) |
| Tradename | — | OptiMOS |