BSC026N04LSATMA1 vs BSC014N04LSIATMA1 Perbandingan
Perbandingan bersamaan detil BSC026N04LSATMA1 dari Infineon dan BSC014N04LSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC026N04LSATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS™ 5 N-Channel Power MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS absolute maximum] |
| Continuous Drain Current (ID, Ta) | 23 A | 31 A |
| Continuous Drain Current (ID, Tc=25°C) | 100 A | — |
| Pulsed Drain Current (IDM, Tc=25°C) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 2.6 mΩ | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: max RDS(on)] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 63 W | — |
| Rentang Suhu Kerja | -55°C to +150°C | -55 C to +150 C |
| Paket | PG-TDSON-8-6 (TDSON 5x6 mm) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS™ 5 | OptiMOS 5 (trench, thin-wafer) |
| Channel Type | N-Channel | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Tradename | — | OptiMOS |