BSC026N04LSATMA1 vs BSC014N04LSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC026N04LSATMA1 disebabkan oleh Infineon dan BSC014N04LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC026N04LSATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS™ 5 N-Channel Power MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS absolute maximum] |
| Continuous Drain Current (ID, Ta) | 23 A | 31 A |
| Continuous Drain Current (ID, Tc=25°C) | 100 A | — |
| Pulsed Drain Current (IDM, Tc=25°C) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 2.6 mΩ | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: max RDS(on)] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 63 W | — |
| Gambaran Suhu Operasi | -55°C to +150°C | -55 C to +150 C |
| Kemasan | PG-TDSON-8-6 (TDSON 5x6 mm) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS™ 5 | OptiMOS 5 (trench, thin-wafer) |
| Channel Type | N-Channel | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Tradename | — | OptiMOS |