BSC027N04LSGATMA1 vs BSC032N04LSATMA1 Comparison
Detailed side-by-side comparison of BSC027N04LSGATMA1 by Infineon and BSC032N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N04LSGATMA1
BSC027N04LSGATMA1 - 40V 100A 2.7mΩ OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 ✓ ActiveInfineon
BSC032N04LSATMA1
BSC032N04LSATMA1 - 40V 3.2mΩ OptiMOS 5 N-MOSFET | Infineon
BSC032N04LSATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC027N04LSGATMA1 | BSC032N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $0.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 24 A | 21 A |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | 98 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΩ | — |
| Power Dissipation (Ta=25°C) | 2.5 W | — |
| Power Dissipation (Tc=25°C) | 83 W | — |
| Operating Temperature Range | -55°C to +150°C | — |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | OptiMOS 5 trench |
| MSL Level | 1 | — |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | — |
| Part Series | — | OptiMOS 5 40V |
| FET Type | — | N-Channel |
| RDS(on) max at VGS=10V | — | 3.2 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 52 W |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Operating Junction Temperature | — | -55°C to +175°C |
| Lead-Free | — | Yes |