BSC027N04LSGATMA1 vs BSC032N04LSATMA1 Comparison

Detailed side-by-side comparison of BSC027N04LSGATMA1 by Infineon and BSC032N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC027N04LSGATMA1 BSC032N04LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta=25°C 24 A 21 A
Continuous Drain Current (ID) at Tc=25°C 100 A 98 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ —
Power Dissipation (Ta=25°C) 2.5 W —
Power Dissipation (TC=25°C) 83 W —
Operating Temperature Range -55°C to +150°C —
Package PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-6 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 3 (Trench) OptiMOS 5 trench
MSL Level 1 —
RoHS Status Compliant Compliant
Halogen Free Yes —
Part Series — OptiMOS 5 40V
FET Type — N-Channel
RDS(on) max at VGS=10V — 3.2 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 52 W
Gate-Source Voltage (VGS) — ±20 V
Operating Junction Temperature — -55°C to +175°C
Lead-Free — Yes

Datasheets & Resources

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