BSC027N04LSGATMA1 vs BSC032N04LSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC027N04LSGATMA1 sa pamamagitan ng Infineon at BSC032N04LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC027N04LSGATMA1 - 40V 100A 2.7mΩ OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC027N04LSGATMA1 | BSC032N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 24 A | 21 A |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | 98 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΩ | — |
| Power Dissipation (Ta=25°C) | 2.5 W | — |
| Pwersang Pinahihigpit (TC=25°C) | 83 W | — |
| Hanay ng Temperature na Operasyon | -55°C to +150°C | — |
| Packhaging | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | OptiMOS 5 trench |
| Level ng MSL | 1 | — |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Part Series | — | OptiMOS 5 40V |
| FET Type | — | N-Channel |
| RDS(on) max at VGS=10V | — | 3.2 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 52 W |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Temperature ng Junction na Operasyon | — | -55°C to +175°C |
| Lead-Free | — | Yes |