BSC030N03MSGATMA1 vs BSC035N04LSGATMA1 比較

詳細並排比較 BSC030N03MSGATMA1 由 Infineon 與 BSC035N04LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC030N03MSGATMA1 BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΩ OptiMOS | Infineon

BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΩ OptiMOS | Infineon

BSC030N03MSGATMA1 ✓ 啟用中

規格比較

參數 BSC030N03MSGATMA1 BSC035N04LSGATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3M OptiMOS 3
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at Ta 21 A —
Continuous Drain Current (ID) at Tc=25°C 100 A 100 A
Drain-Source On-Resistance (RDS(on)) 3.0 mΩ (typical at VGS=10V) —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] 1.7 V (typ)
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc=25°C 69 W —
工作接面溫度 -55°C to +150°C -55°C to +150°C
封裝 PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) PG-TDSON-8-1 (8-pin, exposed drain pad)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Drive Voltage (Min/Max RDS(on)) 4.5V / 10V —
Status Active —
Continuous Drain Current (ID) at Ta=25°C — 21 A
RDS(on) Max at VGS=10V — 3.5 mΩ
Power Dissipation (Pd) at Ta=25°C — 2.5 W
Power Dissipation (Pd) at Tc=25°C — 69 W
Lead-Free — Yes

資料表與資源

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