BSC032N04LSATMA1 vs IAUCN04S7L019ATMA1 Comparison
Detailed side-by-side comparison of BSC032N04LSATMA1 by Infineon and IAUCN04S7L019ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC032N04LSATMA1 | IAUCN04S7L019ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 5 40V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 98 A | — |
| RDS(on) max at VGS=10V | 3.2 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 52 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Technology | OptiMOS 5 trench | — |
| Package | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-33 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55°C to +175°C | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Series | — | OptiMOS™ 7 |
| Drain-to-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 120 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | — | 1.91 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: Vgs(th) typical/max value] |
| Gate Charge (Q<sub>g</sub>) | — | [DATA_NEEDED: Qg total/nominal value] |
| Operating Temperature | — | -55°C to +175°C (junction) |
| Power Dissipation (P<sub>D</sub>) | — | [DATA_NEEDED: Pd max at 25C] |
| Thermal Resistance, Junction-to-Ambient | — | [DATA_NEEDED: RthJA value] |
| Automotive Qualification | — | AEC-Q101 qualified |
| MSL Level | — | 1 |
| Packaging | — | Tape & Reel (13-inch reel) |
| Standard Pack Quantity | — | 5000 pieces |
| Ordering Code Suffix | — | ATMA1 (Tape & Reel 13") |