BSC032N04LSATMA1 vs IAUCN04S7L019ATMA1 Perbandingan
Perbandingan bersamaan detil BSC032N04LSATMA1 dari Infineon dan IAUCN04S7L019ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC032N04LSATMA1 | IAUCN04S7L019ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 5 40V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 98 A | — |
| RDS(on) max at VGS=10V | 3.2 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 52 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Technology | OptiMOS 5 trench | — |
| Paket | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-33 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Hubung Kerja | -55°C to +175°C | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Series | — | OptiMOS™ 7 |
| Drain-to-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 120 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | — | 1.91 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: Vgs(th) typical/max value] |
| Gate Charge (Q<sub>g</sub>) | — | [DATA_NEEDED: Qg total/nominal value] |
| Suhu Kerja | — | -55°C to +175°C (junction) |
| Power Dissipation (P<sub>D</sub>) | — | [DATA_NEEDED: Pd max at 25C] |
| Tahanan Panas, Hubung-lingkungan | — | [DATA_NEEDED: RthJA value] |
| Automotive Qualification | — | AEC-Q101 qualified |
| Level MSL | — | 1 |
| Packaging | — | Tape & Reel (13-inch reel) |
| Standard Pack Quantity | — | 5000 pieces |
| Ordering Code Suffix | — | ATMA1 (Tape & Reel 13") |