BSC032N04LSATMA1 vs IAUCN04S7L019ATMA1 比較
詳細並排比較 BSC032N04LSATMA1 由 Infineon 與 IAUCN04S7L019ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC032N04LSATMA1 | IAUCN04S7L019ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 5 40V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 21 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 98 A | — |
| RDS(on) max at VGS=10V | 3.2 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 52 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Technology | OptiMOS 5 trench | — |
| 封裝 | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-33 |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作接面溫度 | -55°C to +175°C | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Series | — | OptiMOS™ 7 |
| Drain-to-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 120 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | — | 1.91 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: Vgs(th) typical/max value] |
| Gate Charge (Q<sub>g</sub>) | — | [DATA_NEEDED: Qg total/nominal value] |
| 工作溫度 | — | -55°C to +175°C (junction) |
| Power Dissipation (P<sub>D</sub>) | — | [DATA_NEEDED: Pd max at 25C] |
| 熱阻，接面至環境 | — | [DATA_NEEDED: RthJA value] |
| Automotive Qualification | — | AEC-Q101 qualified |
| MSL 等級 | — | 1 |
| Packaging | — | Tape & Reel (13-inch reel) |
| Standard Pack Quantity | — | 5000 pieces |
| Ordering Code Suffix | — | ATMA1 (Tape & Reel 13") |