BSC034N06NSATMA1 vs BSC030N03MSGATMA1 Comparison
Detailed side-by-side comparison of BSC034N06NSATMA1 by Infineon and BSC030N03MSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC034N06NSATMA1 | BSC030N03MSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 74 W | — |
| Operating Temperature Range | -55C to +150C | — |
| Technology | OptiMOS 5 | MOSFET (Metal Oxide) |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| RoHS Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3M |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Drain-Source On-Resistance (RDS(on)) | — | 3.0 mΩ (typical at VGS=10V) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc=25°C | — | 69 W |
| Operating Junction Temperature | — | -55°C to +150°C |
| Drive Voltage (Min/Max RDS(on)) | — | 4.5V / 10V |
| Status | — | Active |