BSC034N06NSATMA1 vs BSC030N03MSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC034N06NSATMA1 sa pamamagitan ng Infineon at BSC030N03MSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC034N06NSATMA1 BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 ✓ Nakahanda
Infineon
BSC030N03MSGATMA1 BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΩ OptiMOS | Infineon

BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΩ OptiMOS | Infineon

BSC030N03MSGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC034N06NSATMA1 BSC030N03MSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V 30 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 74 W —
Hanay ng Temperature na Operasyon -55C to +150C —
Technology OptiMOS 5 MOSFET (Metal Oxide)
Packhaging PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL level] —
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS 3M
FET Type — N-Channel
Continuous Drain Current (ID) at Ta — 21 A
Continuous Drain Current (ID) at Tc=25°C — 100 A
Drain-Source On-Resistance (RDS(on)) — 3.0 mΩ (typical at VGS=10V)
Gate-Source Voltage (VGS) max — ±20 V
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc=25°C — 69 W
Temperature ng Junction na Operasyon — -55°C to +150°C
Drive Voltage (Min/Max RDS(on)) — 4.5V / 10V
Status — Active

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