BSC034N06NSATMA1 vs BSC030N03MSGATMA1 Perbandingan

Perbandingan bersamaan detil BSC034N06NSATMA1 dari Infineon dan BSC030N03MSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC034N06NSATMA1 BSC030N03MSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V 30 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 74 W —
Rentang Suhu Kerja -55C to +150C —
Technology OptiMOS 5 MOSFET (Metal Oxide)
Paket PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS 3M
FET Type — N-Channel
Continuous Drain Current (ID) at Ta — 21 A
Continuous Drain Current (ID) at Tc=25°C — 100 A
Drain-Source On-Resistance (RDS(on)) — 3.0 mΩ (typical at VGS=10V)
Gate-Source Voltage (VGS) max — ±20 V
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc=25°C — 69 W
Suhu Hubung Kerja — -55°C to +150°C
Drive Voltage (Min/Max RDS(on)) — 4.5V / 10V
Status — Active

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