BSC066N06NSATMA1 vs BSC076N06NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC066N06NSATMA1 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC066N06NSATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 64 A | — |
| Continuous Drain Current (ID) at TC=100°C | 45 A | — |
| Pulsed Drain Current (IDM) | 256 A | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 6.6 mΩ (max) | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | 2.0 V to 3.5 V |
| Total Gate Charge (Qg) | 26 nC (typ) | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at TC=25°C | 46 W | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Thermal Resistance, Junction-to-Case (RθJC) | 1.3 °C/W | — |
| Operating Junction Temperature | -55°C to +150°C | — |
| Package | PG-TDSON-8-6 (TDSON EP) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 (unlimited) |
| RoHS Status | Compliant | — |
| Technology | OptiMOS 5 60 V trench-gate | N-Channel Trench MOSFET |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| Continuous Drain Current (ID) at TC=25C | — | 50 A |
| On-Resistance RDS(on) max at VGS=10V | — | 7.6 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.4 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 69 W |
| Operating Temperature Range | — | -55C to +150C |
| RoHS Compliance | — | Compliant |
| Halogen Free | — | Yes (per Infineon product page) |