BSC0921NDIATMA1 vs BSC014N04LSATMA1 Comparison
Detailed side-by-side comparison of BSC0921NDIATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0921NDIATMA1
BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon
BSC0921NDIATMA1 β ActiveInfineon
BSC014N04LSATMA1
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC0921NDIATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 25V (N-channel) | Trench (OptiMOS 5, thin-wafer) |
| Configuration | Dual N-Channel MOSFET Array | β |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) | 17 A (per channel) | β |
| Pulsed Drain Current (IDM) | 31 A (per channel, package-limited) | β |
| Total Power Dissipation (PD) | 1 W | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | β |
| Gate Charge (Qg) | Ultra-low (OptiMOS 25V family characteristic) | β |
| Output Charge (Qoss) | Ultra-low (OptiMOS 25V family characteristic) | β |
| Package | PG-TISON-8 (8-pin, exposed pad) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per Infineon OptiMOS family) | 1 (unlimited) |
| Primary Application | Synchronous buck converters, VRMs, POL regulators | β |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| RDS(on) max at VGS=10 V | β | 1.4 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 96 W |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Operating Temperature Range | β | -55C to +175C |