BSC097N06NSATMA1 vs BSC0921NDIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC097N06NSATMA1 sa pamamagitan ng Infineon at BSC0921NDIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC097N06NSATMA1 BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

BSC097N06NSATMA1 ✓ Nakahanda
Infineon
BSC0921NDIATMA1 BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon

BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon

BSC0921NDIATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC097N06NSATMA1 BSC0921NDIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Part Status Active —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 46 A —
Continuous Drain Current (ID) at Ta=25C [DATA_NEEDED: ID at Ta=25C PCB-mounted] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM peak value] 31 A (per channel, package-limited)
RDS(on) max at VGS=10 V 9.7 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg typ) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 36 W —
Temperature ng Junction na Operasyon -55C to +150C —
Packhaging / Kaso PG-TDSON-8-6 (SuperSO8 5x6 mm) —
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS 5 (Trench) OptiMOS 25V (N-channel)
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (Unlimited) 1 (per Infineon OptiMOS family)
Avalanche Rated Yes (EAS per datasheet) —
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) — 17 A (per channel)
Total Power Dissipation (PD) — 1 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]
Gate Charge (Qg) — Ultra-low (OptiMOS 25V family characteristic)
Output Charge (Qoss) — Ultra-low (OptiMOS 25V family characteristic)
Packhaging — PG-TISON-8 (8-pin, exposed pad)
Temperature na Operasyon — -55C to +150C (junction)
Primary Application — Synchronous buck converters, VRMs, POL regulators

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