BSC0993NDATMA1 vs BSC030N03MSGATMA1 Comparison
Detailed side-by-side comparison of BSC0993NDATMA1 by Infineon and BSC030N03MSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0993NDATMA1
BSC0993NDATMA1 - 30V 17A Dual N-Ch OptiMOS 5 Array | Infineon
BSC0993NDATMA1 β ActiveInfineon
BSC030N03MSGATMA1
BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΞ© OptiMOS | Infineon
BSC030N03MSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC0993NDATMA1 | BSC030N03MSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $0.43 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 30V | β |
| Configuration | Dual N-Channel (Array) | β |
| Drain-Source Voltage (Vds) | 30 V | β |
| Continuous Drain Current (Id) @ Ta | 17 A | β |
| Package | PG-TISON-8 | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | MOSFET (Metal Oxide) |
| Channel Mode | Enhancement | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| ESD Protection | Yes (integrated) | β |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Rds(on) max @ Vgs=10V | [DATA_NEEDED: Rds(on) value] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Series | β | OptiMOS 3M |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 21 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 100 A |
| Drain-Source On-Resistance (RDS(on)) | β | 3.0 mΞ© (typical at VGS=10V) |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc=25Β°C | β | 69 W |
| Operating Junction Temperature | β | -55Β°C to +150Β°C |
| Drive Voltage (Min/Max RDS(on)) | β | 4.5V / 10V |
| Status | β | Active |