BSC0993NDATMA1 vs BSC030N03MSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0993NDATMA1 disebabkan oleh Infineon dan BSC030N03MSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC0993NDATMA1 | BSC030N03MSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 30V | — |
| Configuration | Dual N-Channel (Array) | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) @ Ta | 17 A | — |
| Kemasan | PG-TISON-8 | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | MOSFET (Metal Oxide) |
| Channel Mode | Enhancement | — |
| Gambaran Suhu Operasi | -55C to +150C (junction) | — |
| ESD Protection | Yes (integrated) | — |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Rds(on) max @ Vgs=10V | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Series | — | OptiMOS 3M |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Drain-Source On-Resistance (RDS(on)) | — | 3.0 mΩ (typical at VGS=10V) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc=25°C | — | 69 W |
| Suhu Hubungan Operasi | — | -55°C to +150°C |
| Drive Voltage (Min/Max RDS(on)) | — | 4.5V / 10V |
| Status | — | Active |