BSC0993NDATMA1 vs BSC030N03MSGATMA1 Perbandingan
Perbandingan bersamaan detil BSC0993NDATMA1 dari Infineon dan BSC030N03MSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC0993NDATMA1 | BSC030N03MSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 30V | — |
| Configuration | Dual N-Channel (Array) | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) @ Ta | 17 A | — |
| Paket | PG-TISON-8 | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | MOSFET (Metal Oxide) |
| Channel Mode | Enhancement | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | — |
| ESD Protection | Yes (integrated) | — |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Rds(on) max @ Vgs=10V | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Series | — | OptiMOS 3M |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Drain-Source On-Resistance (RDS(on)) | — | 3.0 mΩ (typical at VGS=10V) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc=25°C | — | 69 W |
| Suhu Hubung Kerja | — | -55°C to +150°C |
| Drive Voltage (Min/Max RDS(on)) | — | 4.5V / 10V |
| Status | — | Active |