BSC340N08NS3GATMA1 vs BSC12DN20NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC340N08NS3GATMA1 sa pamamagitan ng Infineon at BSC12DN20NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon
BSC340N08NS3GATMA1 ✓ NakahandaInfineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC340N08NS3GATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC340N08NS3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench) | OptiMOS power MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 200 V |
| Continuous Drain Current (ID, Tc) | 23 A | 11.3 A |
| Continuous Drain Current (ID, Ta) | 7 A | — |
| Pulsed Drain Current (IDM) | 92 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 34 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Power Dissipation (Tc) | 32 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | [DATA_NEEDED: operating temperature range] |
| Packhaging | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| Channel Type | Single N-Channel | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical] | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| Product Family | — | OptiMOS 200V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Power Dissipation (PD, Tc) | — | 50 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Tindminan RoHS | — | Compliant |
| Configuration | — | Single N-channel |
| Bilang ng Pin | — | 8 |