BSC340N08NS3GATMA1 vs BSC12DN20NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC340N08NS3GATMA1 disebabkan oleh Infineon dan BSC12DN20NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC340N08NS3GATMA1 BSC12DN20NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC340N08NS3GATMA1 —
Technology OptiMOS 3 (N-Channel Trench) OptiMOS power MOSFET
Drain-Source Voltage (VDS) 80 V 200 V
Continuous Drain Current (ID, Tc) 23 A 11.3 A
Continuous Drain Current (ID, Ta) 7 A —
Pulsed Drain Current (IDM) 92 A —
On-State Resistance RDS(on) max @ VGS=10V 34 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage VGS max +/- 20 V —
Power Dissipation (Tc) 32 W —
Power Dissipation (Ta) 2.5 W —
Gambaran Suhu Operasi -55C to +150C [DATA_NEEDED: operating temperature range]
Kemasan PG-TDSON-8-5 (SuperSO8 5x6) PG-TDSON-8-5
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 1 (per JEDEC J-STD-020)
RoHS / Lead-Free RoHS compliant, lead-free —
Channel Type Single N-Channel —
Total Gate Charge Qg typ [DATA_NEEDED: Qg typical] —
Avalanche Rating Repetitive avalanche rated —
Product Family — OptiMOS 200V
Jenis Transistor — N-Channel MOSFET
Power Dissipation (PD, Tc) — 50 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold typical]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Status RoHS — Compliant
Configuration — Single N-channel
Kiraan Pin — 8

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