BSC340N08NS3GATMA1 vs ISC028N03LF2SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC340N08NS3GATMA1 disebabkan oleh Infineon dan ISC028N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC340N08NS3GATMA1 ISC028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC340N08NS3GATMA1 —
Technology OptiMOS 3 (N-Channel Trench) —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc) 23 A —
Continuous Drain Current (ID, Ta) 7 A —
Pulsed Drain Current (IDM) 92 A [DATA_NEEDED: pulsed drain current]
On-State Resistance RDS(on) max @ VGS=10V 34 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] 2.35 V
Gate-Source Voltage VGS max +/- 20 V —
Power Dissipation (Tc) 32 W —
Power Dissipation (Ta) 2.5 W —
Gambaran Suhu Operasi -55C to +150C —
Kemasan PG-TDSON-8-5 (SuperSO8 5x6) PG-TDSON-8-62 (5x6 mm) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 1 (per JEDEC J-STD-020)
RoHS / Lead-Free RoHS compliant, lead-free Yes (RoHS compliant)
Channel Type Single N-Channel —
Total Gate Charge Qg typ [DATA_NEEDED: Qg typical] —
Avalanche Rating Repetitive avalanche rated —
Product Family — OptiMOS 5 30V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
Suhu Hubungan Operasi — -55 C to +175 C

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