BSC340N08NS3GATMA1 vs ISC028N03LF2SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC340N08NS3GATMA1 sa pamamagitan ng Infineon at ISC028N03LF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon
BSC340N08NS3GATMA1 ✓ NakahandaInfineon
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC340N08NS3GATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC340N08NS3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench) | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc) | 23 A | — |
| Continuous Drain Current (ID, Ta) | 7 A | — |
| Pulsed Drain Current (IDM) | 92 A | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) max @ VGS=10V | 34 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | 2.35 V |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Power Dissipation (Tc) | 32 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | — |
| Packhaging | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| RoHS / Lead-Free | RoHS compliant, lead-free | Yes (RoHS compliant) |
| Channel Type | Single N-Channel | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical] | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| Product Family | — | OptiMOS 5 30V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 128 A |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Power Dissipation at TA | — | 3 W |
| Power Dissipation at TC | — | 83 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |