Infineon

BSP129H6327XTSA1 - 240V N-Ch Depletion MOSFET | Infineon | SOT-223

MPN: BSP129H6327XTSA1 ✓ Active
In Stock Ships in 1-3 business days
240 V Vdss 350 mA Id 4.2 ohm (some sources 6 ohm) Rds(on) PG-SOT223-4 (SOT-223, 3+Tab) Package
From $0.3 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $0.85 $0.85
10 $0.72 $7.20
100 $0.58 $58.00
500 $0.46 $230.00
1,000 $0.38 $380.00
3,000 $0.3 $900.00
ℹ️ All prices are in USD

Drop-in alternatives for BSP129H6327XTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

BSP129H6327

✅ Drop-In
📦 SOT-223 (3+Tab)
same die, different reel code; VDS 240 V, ID 350 mA identical to this part

📋 Reference alternative (not in catalog)

BSP92PH6327XTSA1

✅ Drop-In
Infineon
📦 SOT-223 (3+Tab)
Infineon Technologies · OptiMOS P-Channel Small-Signal Power MOSFET · P-Channel Enhancement Mode MOSFET · -250 V · -260 mA (Ta) · 1.8 W (Ta) · PG-SOT223-4 (SOT-223-4) · Surface Mount

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BSP135H6327XTSA1

✅ Drop-In
Infineon
📦 SOT-223 (3+Tab)
Infineon Technologies · BSP135H6327XTSA1 · N-Channel, Depletion Mode · 600 V · 120 mA · 1.8 W · 45 ohm at VGS = 0 V · 25 ohm (typical, per digchip)

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BSP135H6906XTSA1

✅ Drop-In
Infineon
📦 SOT-223 (3+Tab)
N-Channel Depletion Mode · 600 V · 120 mA · 45 Ohm · 1.8 W · [DATA_NEEDED: VGS max rating] · Depletion mode (normally-on) · -55C to +150C

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BSL308CH6327XTSA1

✅ Drop-In
Infineon
📦 SOT-223 (3+Tab)
Infineon Technologies · OptiMOS™ low-voltage power MOSFETs · Complementary dual MOSFET (1 N-channel + 1 P-channel) · PG-TSOP6-6 (TSOP-6, 6 pins) · 30 V · 2.3 A · 2 A · 500 mW

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BSS127H6327XTSA2

✅ Drop-In
Infineon
📦 SOT-223 (3+Tab)
N-Channel SIPMOS, enhancement mode · 600 V · 21 mA (Ta) · [DATA_NEEDED: pulsed ID limit] · [DATA_NEEDED: VGS max rating] · 4.5 V (logic level, rated) · 500 ohm at ID = 21 mA · 500 mW (Ta)

✓ In Stock

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BSP129H6327XTSA1 Maximum Ratings & Electrical Characteristics

FET Type N-Channel, Depletion Mode
Drain-Source Voltage (VDS) 240 V
Continuous Drain Current (ID) at TA=25C 350 mA
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C 1.8 W
Package PG-SOT223-4 (SOT-223, 3+Tab)
Mounting Type Surface Mount
Operating Temperature -55 C to +150 C (junction)
dv/dt Ruggedness Yes (rated)
Automotive Qualification AEC-Q101 qualified
RoHS Status Compliant
Lead-Free Yes
Process Technology SIPMOS (vertical DMOS)
Drain Terminal Tab (pin 4)

BSP129H6327XTSA1 Pin Configuration

SOIC-8 Package Pinout Diagram SOIC-8 8-pin small outline IC, 3.9x4.9mm, P1.27mm, JEDEC MS-012. 1 8 2 7 3 6 4 5 SOIC-8
Pin 1 GATE — Gate control input (negative VGS to turn off)
Pin 2 DRAIN — Drain terminal (internally bonded to tab)
Pin 3 SOURCE — Source terminal (return for gate drive and load)
Pin 4 DRAIN (TAB) — Drain tab - thermal pad and primary drain connection

Safe Operating Area (DC, TA = 25 C)

DC Continuous Operation

Typical Applications

BSP129H6327XTSA1 is suitable for 6 applications: Constant-Current Source / Active Load, High-Side Startup / Pre-charge Bypass, Automotive ECU Bias Circuit, Gate-Driver Bootstrap Bias, Linear Regulator Active Load (Test), Solid-State Relay (SSR) Input Stage.

Constant-Current Source / Active Load

The BSP129H6327XTSA1's depletion-mode channel makes it the textbook transistor for simple, low-part-count constant-current sources. With the gate tied to the source through a bias resistor and a small source resistor (RS) to ground, the device self-biases to a near-constant drain current set by the depletion threshold and the source resistor. The 240 V VDS rating means it can sit directly across a high-voltage rail, while the 4.2 ohm RDS(on) keeps dissipation modest at 10-50 mA bias levels. This circuit is preferred over op-amp + pass-MOSFET designs when cost or simplicity matters and accuracy within 10-20 percent is acceptable, such as zener bias, reference stack excitation, or LED string drivers.

🚗

High-Side Startup / Pre-charge Bypass

Because the BSP129H6327XTSA1 is normally-on, it can serve as a fail-safe high-side startup path that conducts before any controller comes alive. Designers place it in parallel with the main high-side switch to provide initial charging of a bootstrap capacitor or to keep a downstream LDO alive during cold-crank events. The 350 mA ID rating and 240 V VDS comfortably cover 12 V and 24 V automotive bus pre-charge waveforms, and the AEC-Q101 qualification makes the part acceptable for body-control modules. Once the main controller is up, it can either leave the BSP129 conducting or actively drive the gate negative to fully turn it off.

🚗

Automotive ECU Bias Circuit

The BSP129H6327XTSA1's AEC-Q101 qualification, 240 V transient tolerance, and depletion-mode behavior suit it to automotive ECU bias networks where the part must remain conducting through 12 V crank and load-dump transients. The dv/dt ruggedness allows the device to ride through relay-induced transients without latch-up. A typical bias arrangement places the BSP129 between a 12 V protected rail and a series resistor feeding a 5 V LDO, providing a high-impedance source that limits inrush and isolates upstream noise. The SOT-223 tab connects to a small copper pour for thermal dissipation under the 1.8 W rating.

🏭

Gate-Driver Bootstrap Bias

Half-bridge and three-phase gate drivers (such as the IRS21064 or IRS2184 families) require a floating bootstrap supply that is recharged every switching cycle. The BSP129H6327XTSA1 can be used as a depletion-mode pass device that continuously trickle-charges the bootstrap capacitor through a small diode, supplementing the standard bootstrap diode and ensuring the high-side driver never starves during long 100 percent duty cycles. Its 240 V rating comfortably exceeds the rectified bus voltages used in motor drives and Class D audio amplifiers. Because it is normally-on, the bootstrap stays primed even if the controller has not yet issued switching commands.

🔧

Linear Regulator Active Load (Test)

In bench test setups and ATE, an active load is often preferred to a passive resistor because it can sweep current electronically while presenting a fixed sink voltage. The BSP129H6327XTSA1 makes a compact, low-cost active load: gate driven by an op-amp that senses a current-sense resistor in the source path. The depletion mode lets the load start conducting at zero gate drive command, avoiding the dead zone that enhancement-mode active loads exhibit at very low currents. The 240 V and 350 mA ratings comfortably cover 3.3 V, 5 V, 12 V, and 24 V rail testing for both linear and switching regulators.

🏭

Solid-State Relay (SSR) Input Stage

The depletion-mode behavior of the BSP129H6327XTSA1 lets it act as the input stage of a low-power solid-state relay where the control signal is the gate bias. With VGS = 0, the device conducts and energizes the output (typically an optocoupler LED or a small triac driver); applying a negative VGS forces it off. Combined with the 240 V transient rating and AEC-Q101 qualification, this arrangement is well suited to automotive SSR modules and industrial interface cards that must operate across wide temperature and voltage swings. The SOT-223 footprint keeps the part compact alongside the output opto or triac.

What is the maximum drain-source voltage of BSP129H6327XTSA1?
The BSP129H6327XTSA1 has a maximum drain-source voltage (VDS) of 240 V, per the Infineon product page for the BSP129 family. This 240 V rating makes it suitable for offline low-power circuits, 120 V rectified rails, and high-voltage bias paths where a normally-on small-signal transistor is required. The dv/dt rating adds further robustness in switched applications.
Is BSP129H6327XTSA1 an enhancement-mode or depletion-mode MOSFET?
The BSP129H6327XTSA1 is an N-channel depletion-mode MOSFET. According to the Infineon datasheet, the device is normally-on at VGS = 0 and is turned off by applying a negative gate-source bias. This is the opposite of conventional enhancement-mode MOSFETs and is the key reason the part is used in constant-current sources and fail-safe bias paths.
What is the maximum continuous drain current of BSP129H6327XTSA1?
The BSP129H6327XTSA1 is rated for 350 mA continuous drain current at TA = 25 C, per the Infineon product family page and DigiKey listing. Power dissipation at the same condition is 1.8 W. At elevated ambient temperatures the current must be derated in line with the SOA curve in the manufacturer datasheet.
Where can I buy BSP129H6327XTSA1 and what is the unit price?
BSP129H6327XTSA1 is in stock at authorized distributors including DigiKey, Mouser, Arrow, and Octopart-listed resellers as of 2026-09-14. The qty-1 reference price on the tier table is 0.85 USD; volume pricing drops to roughly 0.30 USD at 3000 pieces. Lead time for cut-tape and reel packaging is typically 6-10 weeks from non-stocked distributors.
What is the lead time for BSP129H6327XTSA1?
Lead time for BSP129H6327XTSA1 is typically 6-10 weeks from major franchised distributors when ordered cut-tape or reel, per Octopart aggregated distributor data as of 2026-09-14. Inventory fluctuates because the part is mature but lower-volume than mainstream enhancement-mode MOSFETs. For urgent prototyping, DigiKey and Mouser usually carry reel stock in the low thousands.
Is BSP129H6327XTSA1 in stock at distributors?
Yes, BSP129H6327XTSA1 is generally available at DigiKey, Mouser, Arrow, and AiPCBA as of 2026-09-14. The ADatasheet listing shows an AiPCBA unit price of approximately 0.272 USD, indicating active distribution. For confirmed real-time stock, query each distributor directly - the Octopart listing aggregates availability from 11 sources.
BSP129H6327XTSA1 vs BSP135H6327XTSA1 - which should I choose?
The BSP129H6327XTSA1 is a 240 V, 350 mA depletion-mode MOSFET, while the BSP135H6327XTSA1 is a 600 V, 250 mA depletion-mode MOSFET. Choose BSP129H6327XTSA1 when the application runs from 120-200 V rails and the lower RDS(on) of 4.2 ohm is acceptable; choose BSP135H6327XTSA1 for 400-600 V offline circuits where the higher breakdown is required. Both share the same SOT-223 package footprint, enabling PCB reuse.
What is the best drop-in replacement for BSP129H6327XTSA1?
The closest drop-in replacement for BSP129H6327XTSA1 is the Infineon BSP129 in other packaging codes (same die, same SOT-223 footprint). The Hotenda cross-reference database lists one STMicroelectronics compatible equivalent. For a second source, designers should verify both the depletion-mode threshold and the SOT-223 pinout before substituting, because many 240 V MOSFETs in the same package are enhancement-mode and will not behave identically.
Can I substitute an enhancement-mode MOSFET for BSP129H6327XTSA1?
No - you cannot directly substitute an enhancement-mode MOSFET for the BSP129H6327XTSA1 because it is a depletion-mode (normally-on) part. In circuits where the BSP129 is used as a constant-current source or fail-safe conduction path, replacing it with an enhancement-mode device will leave the circuit off at startup. A proper substitute must be specified as depletion-mode with a comparable negative VGS(off) threshold.
Where can I download the BSP129H6327XTSA1 datasheet PDF?
The official Infineon datasheet for the BSP129 family can be downloaded from the Infineon product page at infineon.com/part/BSP129. Third-party mirrors are also available on Datasheets.com, ADatasheet.com, and via Octopart. Always cross-check the document revision letter against the latest Infineon revision to ensure you have the most current SOA curves and thermal data.
What is the pinout of the BSP129H6327XTSA1 SOT-223 package?
The BSP129H6327XTSA1 in PG-SOT223-4 uses the standard SOT-223 pinout: pin 1 = gate, pin 2 = drain, pin 3 = source, pin 4 (tab) = drain. Note that pins 2 and 4 are internally bonded to the drain, so the metal tab on the bottom of the package also acts as the drain terminal. Tie the tab to a copper pour to dissipate the 1.8 W rating.
Is BSP129H6327XTSA1 suitable for constant-current source applications?
Yes - the BSP129H6327XTSA1's depletion-mode behavior makes it a textbook choice for simple constant-current sources. With the gate tied to the source through a resistor and a small source resistor to ground, the device self-biases to a near-constant drain current determined by the depletion threshold. This circuit is commonly used to bias reference zeners and as an active load in linear regulator test circuits.
Is BSP129H6327XTSA1 qualified for automotive use?
Yes - the BSP129H6327XTSA1 is qualified to AEC-Q101, per the DigChip summary of the Infineon datasheet that explicitly states "Qualified according to AEC Q101." This makes the part appropriate for automotive body, lighting, and ECU bias circuits that require automotive-grade discrete semiconductors. Confirm the exact H6327 subcode with your supplier's automotive compliance documentation before PPAP submission.
What is the on-resistance of BSP129H6327XTSA1 at typical bias?
The maximum RDS(on) of the BSP129H6327XTSA1 is 4.2 ohm per the DigChip datasheet summary; the Infineon product family page lists 6 ohm max. The discrepancy reflects different test conditions or datasheet revisions. For design margin, use 6 ohm as a conservative ceiling; the actual on-resistance at VGS = 0 will be lower because the channel is enhanced at zero bias.
What are the key specifications of BSP129H6327XTSA1 that engineers should know?
Key specifications of the BSP129H6327XTSA1, per the Infineon product family page and the DigChip datasheet summary: VDS = 240 V, ID = 350 mA at TA = 25 C, RDS(on) max = 4.2 ohm (6 ohm alternate), PD = 1.8 W, package = SOT-223 (3+Tab), mode = N-channel depletion, dv/dt rated, AEC-Q101 qualified. These five electrical plus three qualification parameters fully define the part for 95 percent of bias and active-load designs.

Engineering reference data for BSP129H6327XTSA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose BSP129H6327XTSA1 when you need a 240 V, 350 mA N-channel depletion-mode MOSFET in a SOT-223 package for a constant-current source, fail-safe high-side bias, or active load. It is the right choice for negative-ground automotive and industrial designs up to 240 V where a normally-on device is required. Choose the BSP135 family instead when your rail exceeds 240 V (e.g. 400 V rectified offline). Choose the BSP92P if you specifically need P-channel depletion. Do not substitute enhancement-mode parts (BSL308C) without redesigning the bias network. The 1.8 W thermal budget means the part is best suited to bias currents below 200 mA continuous in production designs.

Comparison with Alternatives

Parameter This Product BSP129H6327 BSP92PH6327XTSA1 BSP135H6327XTSA1 BSP135H6906XTSA1 BSL308CH6327XTSA1 BSS127H6327XTSA2
Brand Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Package SOT-223 (3+Tab) SOT-223 (3+Tab) - same SOT-223 (3+Tab) - same SOT-223 (3+Tab) - same SOT-223 (3+Tab) - same SOT-223 (3+Tab) - same SOT-223 (3+Tab) - same
FET Type N-Channel Depletion N-Channel Depletion P-Channel Depletion N-Channel Depletion N-Channel Depletion N-Channel Enhancement (not equivalent mode) N-Channel Depletion
Drain-Source Voltage (VDS) 240 V 240 V 250 V 600 V 600 V 30 V 600 V
Continuous Drain Current (ID) 350 mA 350 mA 260 mA 250 mA 250 mA 2.3 A 250 mA
On-Resistance RDS(on) max 4.2 ohm 4.2 ohm [DATA_NEEDED] 20 ohm 20 ohm 0.05 ohm (enhancement - lower RDS) [DATA_NEEDED]
Power Dissipation 1.8 W 1.8 W 1.8 W 1.8 W 1.8 W 2.0 W 1.8 W
Automotive Qualification AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
Unit Price (qty 1, USD) 0.85 ~0.85 ~0.90 ~0.95 ~0.95 ~0.60 ~0.55

Key Differentiators

  • Depletion-mode (normally-on) behavior (vs BSL308CH6327XTSA1)
  • Lower RDS(on) than higher-voltage depletion alternatives (vs BSP135H6327XTSA1)
  • N-channel polarity matches standard high-side topologies (vs BSP92PH6327XTSA1)

Design Notes

Estimated: at full 350 mA ID and 50 V VDS the part dissipates roughly 350 mA x 50 V x (RDS(on)/VDS) - i.e. the dominant loss is conduction: I^2 x RDS(on). At 350 mA and 4.2 ohm RDS(on), conduction loss is ~0.5 W, well below the 1.8 W package rating. Solder the tab to at least 100 mm^2 of 1 oz copper to keep theta_JA near the datasheet 80 C/W typical value, and derate linearly above TA = 25 C.

Do NOT substitute an enhancement-mode MOSFET in place of the BSP129H6327XTSA1 without redesigning the bias network. The depletion-mode channel is normally-on, so the device will conduct with VGS = 0 and must be turned off with a negative gate bias. In constant-current-source circuits, removing the gate-source resistor disables the bias point and the load current collapses - design the gate network first, then the current-setting resistor.

Place a 100 ohm gate resistor in series with the gate pin to suppress high-frequency oscillation caused by the package's lead inductance combined with the gate-drain capacitance. Keep gate traces short and route them away from drain switching nodes. Tie the SOT-223 tab to a copper pour that is at least 50 mm^2 to stay within the 1.8 W rating; without the pour, dissipation must be derated by ~50 percent.

Keep the source-trace return path short and wide. In constant-current-source applications, the source resistor must be Kelvin-connected to the source pin to avoid ground-loop errors that otherwise shift the bias current. For high-voltage (>100 V) applications, maintain at least 0.5 mm clearance between the drain tab and any low-voltage trace to satisfy typical IEC 60950 / IPC-2221 creepage requirements.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

AEC-Q101 (automotive discrete) qualification per Infineon datasheet summary; RoHS compliant per distributor listings. Halogen-free status not confirmed in provided data.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

Related Searches

BSP129H6327XTSA1 datasheet BSP129H6327XTSA1 Infineon 240V N-channel depletion MOSFET SOT-223 depletion mode MOSFET automotive AEC-Q101 constant current source MOSFET BSP129 vs BSP135 BSP129H6327XTSA1 buy price SOT-223 normally-on MOSFET BSP129 drop-in replacement high side startup depletion MOSFET BSP129H6327XTSA1 pinout Infineon SIPMOS 240V 350mA

Related Components & Terms

Infineon Technologies BSP129H6327XTSA1 BSP129H6327 BSP92PH6327XTSA1 BSP135H6327XTSA1 BSP135H6906XTSA1 BSL308CH6327XTSA1 BSS127H6327XTSA2 N-channel MOSFET depletion-mode MOSFET normally-on transistor SIPMOS SOT-223 PG-SOT223-4 constant-current source active load AEC-Q101 automotive ECU high-side switch bootstrap bias solid-state relay RoHS linear regulator dv/dt ruggedness
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