BSP92PH6327XTSA1 - P-Channel 250V 260mA MOSFET SOT-223 | Infineon
MPN: BSP92PH6327XTSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.55 | $5.50 |
| 100 | $0.42 | $42.00 |
| 500 | $0.36 | $180.00 |
| 1,000 | $0.31 | $310.00 |
Drop-in alternatives for BSP92PH6327XTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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BSP92PH6327
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View Datasheet →BSP92PH6327XTSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS P-Channel Small-Signal Power MOSFET |
| Transistor Type | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | -250 V |
| Continuous Drain Current (ID) | -260 mA (Ta) |
| Power Dissipation (PD) | 1.8 W (Ta) |
| Package | PG-SOT223-4 (SOT-223-4) |
| Mounting Type | Surface Mount |
| Channel Polarity | P-Channel |
| Operating Temperature | -55C to +150C (Tj) |
| Lead-Free / RoHS | Yes / Compliant |
| MSL Level | 1 (unlimited) |
| Pin Count | 4 (Gate, Drain, Drain, Source) |
BSP92PH6327XTSA1 Pin Configuration
| Pin 1 | Gate — Gate input; drive below source to turn on P-channel |
| Pin 2 | Drain — Drain connection; load return path |
| Pin 3 | Drain — Drain connection (tied to exposed tab); main current path |
| Pin 4 | Source — Source connection; typically tied to high-side supply rail |
Safe Operating Area (DC, Ta=25C)
Typical Applications
BSP92PH6327XTSA1 is suitable for 7 applications: 48 V Telecom High-Side Load Switch, Industrial 24-100 V Bus Switch, Battery Protection and High-Side Disconnect, Automotive 12 V / 24 V Load Driver, Power Supply OR-ing and Load Sharing, Solenoid and Relay Driver (Low-Side Complement), Display Backlight and LED String Enable Switch.
48 V Telecom High-Side Load Switch
The BSP92PH6327XTSA1's -250 V VDS rating and P-channel topology make it ideal as a high-side load switch on 48 V telecom rails where transient spikes from hot-plug events or ringing can exceed 100 V. The P-channel source connects to the 48 V rail, and an MCU GPIO pulls the gate to ground to enable the load - eliminating the bootstrap or charge-pump circuitry an N-channel high-side switch would require. With -260 mA continuous current, the device handles line-card feed switches, fan power gating, and distribution bus segments.
Recommended
Industrial 24-100 V Bus Switch
Industrial PLCs, factory automation I/O modules, and process control boards frequently distribute 24 V or 100 V field power to sensors, actuators, and remote I/O racks. The BSP92PH6327XTSA1 serves as a per-channel high-side disconnect switch in such systems, with -250 V VDS headroom for inductive kickback and ESD transients common on long cable runs. P-channel drive from a 3.3 V or 5 V MCU GPIO keeps the BOM simple compared to N-channel bootstrap solutions, while the SOT-223-4 tab handles continuous 260 mA per channel without overheating.
Recommended
Battery Protection and High-Side Disconnect
In 48 V battery packs for e-mobility, telecom backup, or industrial energy storage, the BSP92PH6327XTSA1 acts as the high-side disconnect MOSFET in the battery management system (BMS). Its P-channel orientation places the load on the drain side, so a simple ground-referenced gate signal from the BMS MCU can isolate the pack during fault, sleep, or shipping modes. The -250 V VDS rating tolerates the inductive transients of motor controllers and DC-DC converters downstream, and the 1.8 W dissipation envelope covers continuous battery idle current paths.
Recommended
Automotive 12 V / 24 V Load Driver
Although not AEC-Q100 qualified itself, the BSP92PH6327XTSA1 is widely used in non-safety automotive subsystems - infotainment power rails, interior lighting drivers, and body control modules - where 12 V or 24 V loads need to be switched by logic-level MCUs. The -250 V VDS margin easily absorbs load-dump transients up to 100 V seen on 24 V truck electrical systems, and the P-channel high-side drive simplifies harness design. Designers should still derate continuous current to ~150 mA in enclosed automotive environments.
Recommended
Power Supply OR-ing and Load Sharing
The BSP92PH6327XTSA1 is well suited for OR-ing two power sources in redundant supply designs - for example, mains and battery feeds in telecom equipment or industrial UPS systems. The P-channel MOSFET acts as a reverse-current blocker: when both sources are active, the higher-voltage source forward-biases its body diode; the MOSFET is then turned on by pulling the gate low so current flows through the channel with much lower loss than the diode alone. The -250 V rating handles any source transients during switchover events.
Recommended
Solenoid and Relay Driver (Low-Side Complement)
While the BSP92PH6327XTSA1 is primarily a high-side switch, it pairs effectively with high-current N-channel MOSFETs in H-bridge or half-bridge configurations driving solenoids, relays, and small motors. In such topologies, the P-channel handles the high-side brake or slow-decay function while the N-channel handles the PWM switching. The P-channel's logic-level gate drive from an MCU GPIO avoids bootstrap capacitors on the high side, simplifying the gate-driver IC choice and reducing BOM cost.
Recommended
Display Backlight and LED String Enable Switch
Industrial LCD and signage displays use the BSP92PH6327XTSA1 as a high-side enable switch for LED backlight strings powered from 24 V or 48 V rails. The P-channel switch isolates the LED driver IC during standby, eliminating quiescent leakage through the driver and reducing overall display sleep current to single-digit microamps. The -260 mA continuous rating covers strings of 4-8 LEDs at typical drive currents, and the -250 V VDS provides ample headroom for transient ringing on long LED cable assemblies.
Recommended
Recommended Products Summary
Engineering reference data for BSP92PH6327XTSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSP92PH6327 | BSP88H6327XTSA1 | BSP135H6327XTSA1 | BSS87H6327FTSA1 | BSL308CH6327XTSA1 |
|---|---|---|---|---|---|---|
| Package | PG-SOT223-4 (SOT-223-4) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) | PG-SOT223-4 (same) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | -250 V | -250 V | -100 V | -200 V | -240 V | -30 V |
| Continuous Drain Current (ID) | -260 mA | -260 mA | [DATA_NEEDED] | -100 mA | -130 mA | -2.3 A |
| Power Dissipation (PD) | 1.8 W | 1.8 W | 1.8 W | 1.8 W | 1.8 W | 1.8 W |
| Channel Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Technology Family | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS |
| Pricing (1k reel, USD) | $0.31 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Highest VDS rating in the SOT-223-4 P-MOSFET class (vs BSP135H6327XTSA1)
- Higher continuous drain current than BSP135 / BSS87 (vs BSP135H6327XTSA1 and BSS87H6327FTSA1)
- P-channel high-side simplicity vs N-channel bootstrap (vs N-channel equivalent at same VDS)
- Identical die and package as BSP92PH6327 bulk version (vs BSP92PH6327 (no XTSA1 reel suffix))
Design Notes
Estimated: at continuous ID = 260 mA and RDS(on) ~5 ohm, conduction loss is roughly P = ID^2 x RDS(on) = 0.34 W - well within the 1.8 W package limit. However, the SOT-223-4 tab must be soldered to at least 100 mm^2 of 1 oz copper pour to keep junction temperature rise below 50C at 25C ambient. Without the tab soldered, the die will derate severely and may fail under sustained load.
Place the BSP92PH6327XTSA1 with the tab/drain pin connected to the largest practical copper pour on the top layer. Use thermal vias (6-8 x 0.3 mm) under the tab to inner-layer copper planes for additional heat spreading. For high-side switching, the drain copper area doubles as both the thermal path and the PCB creepage/clearance margin to adjacent signals - keep high-voltage traces at least 1 mm from low-voltage signal traces.
Do not assume the SOT-223-4 tab is grounded - it is internally tied to the drain, which on a high-side P-channel switch sits at the load return, NOT at board ground. Soldering the tab to a ground pour would short the drain. Also: the body diode conducts from source to drain (forward biased when Vd > Vs); ensure this does not create unintended current paths in bidirectional switch topologies.
Gate drive traces should be kept short (<10 mm) and routed away from the drain node to minimize dv/dt coupling that could inadvertently turn the device on. Place a 10 kohm pull-up resistor from gate to source (i.e. gate to the high-side rail) to ensure the MOSFET stays off when the MCU GPIO is in high-impedance state during reset or programming. Add a 100 kohm + 100 nF RC snubber across source-drain if switching inductive loads at high frequency.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive safety applications use AEC-Q100 qualified parts. Lead-free and halogen-free per JEDEC J-STD-020 MSL1 rating.
