BSP295H6327XTSA1 vs IRFL4315TRPBF Comparison
Detailed side-by-side comparison of BSP295H6327XTSA1 by Infineon and IRFL4315TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP295H6327XTSA1 | IRFL4315TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at Ta=25 °C | 1.8 A | — |
| Power Dissipation (PD) at Ta=25 °C | 1.8 W | — |
| Drain-Source On-Resistance RDS(on) max | 300 mΩ | — |
| Package | PG-SOT223-4 (3 leads + tab) | SOT-223 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 °C to +150 °C | [DATA_NEEDED: T_J min/max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS Status | Compliant | — |
| Tape and Reel Packing Code | H6327 (7-inch reel) | — |
| Channel Mode | Enhancement | — |
| Technology | Planar N-channel MOSFET | IR MOSFET™ (planar/HEXFET-style) |
| Drain Tab Connection | Pin 4 (tab) | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | — | 150 V |
| Continuous Drain Current (I_D) at 25°C | — | 2.6 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: I_DM rating] |
| R_DS(on) max at V_GS=10V | — | 185 mΩ |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typ/min/max] |
| Total Gate Charge Q_G | — | 12 nC |
| Gate-to-Source Voltage V_GS | — | ±30 V (max) |
| Continuous Source Current (Body Diode I_S) | — | 1.6 A |
| di/dt (Body Diode) | — | 230 A/μs |
| Power Dissipation (Ta) | — | 2.8 W |
| Qualification Standard | — | Industrial market (per Infineon datasheet) |
| Lead-Free / RoHS | — | Lead-free (PBF suffix); RoHS compliant |
| Packaging | — | Tape & Reel (TRPBF) |