BSP295H6327XTSA1 vs IRFL4315TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP295H6327XTSA1 disebabkan oleh Infineon dan IRFL4315TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP295H6327XTSA1 IRFL4315TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) max 60 V —
Continuous Drain Current (ID) at Ta=25 °C 1.8 A —
Power Dissipation (PD) at Ta=25 °C 1.8 W —
Drain-Source On-Resistance RDS(on) max 300 mΩ —
Kemasan PG-SOT223-4 (3 leads + tab) SOT-223
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +150 °C [DATA_NEEDED: T_J min/max]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Qualification AEC-Q101 (Automotive) —
Status RoHS Compliant —
Tape and Reel Packing Code H6327 (7-inch reel) —
Channel Mode Enhancement —
Technology Planar N-channel MOSFET IR MOSFET™ (planar/HEXFET-style)
Drain Tab Connection Pin 4 (tab) —
FET Type — N-Channel MOSFET
Drain-to-Source Voltage (V_DS) — 150 V
Continuous Drain Current (I_D) at 25°C — 2.6 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: I_DM rating]
R_DS(on) max at V_GS=10V — 185 mΩ
Gate Threshold Voltage V_GS(th) — [DATA_NEEDED: V_GS(th) typ/min/max]
Total Gate Charge Q_G — 12 nC
Gate-to-Source Voltage V_GS — ±30 V (max)
Continuous Source Current (Body Diode I_S) — 1.6 A
di/dt (Body Diode) — 230 A/μs
Power Dissipation (Ta) — 2.8 W
Qualification Standard — Industrial market (per Infineon datasheet)
Lead-Free / RoHS — Lead-free (PBF suffix); RoHS compliant
Packaging — Tape & Reel (TRPBF)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga