BSP295H6327XTSA1 vs IRFL4315TRPBF 比較
詳細並排比較 BSP295H6327XTSA1 由 Infineon 與 IRFL4315TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSP295H6327XTSA1 | IRFL4315TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at Ta=25 °C | 1.8 A | — |
| Power Dissipation (PD) at Ta=25 °C | 1.8 W | — |
| Drain-Source On-Resistance RDS(on) max | 300 mΩ | — |
| 封裝 | PG-SOT223-4 (3 leads + tab) | SOT-223 |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 °C to +150 °C | [DATA_NEEDED: T_J min/max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS 狀態 | Compliant | — |
| Tape and Reel Packing Code | H6327 (7-inch reel) | — |
| Channel Mode | Enhancement | — |
| Technology | Planar N-channel MOSFET | IR MOSFET™ (planar/HEXFET-style) |
| Drain Tab Connection | Pin 4 (tab) | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | — | 150 V |
| Continuous Drain Current (I_D) at 25°C | — | 2.6 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: I_DM rating] |
| R_DS(on) max at V_GS=10V | — | 185 mΩ |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typ/min/max] |
| Total Gate Charge Q_G | — | 12 nC |
| Gate-to-Source Voltage V_GS | — | ±30 V (max) |
| Continuous Source Current (Body Diode I_S) | — | 1.6 A |
| di/dt (Body Diode) | — | 230 A/μs |
| Power Dissipation (Ta) | — | 2.8 W |
| Qualification Standard | — | Industrial market (per Infineon datasheet) |
| Lead-Free / RoHS | — | Lead-free (PBF suffix); RoHS compliant |
| Packaging | — | Tape & Reel (TRPBF) |