BSP89H6327XTSA1 vs BSP125H6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP89H6327XTSA1 dari Infineon dan BSP125H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP89H6327XTSA1 BSP125H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET, enhancement mode N-Channel MOSFET
Technology SIPMOS (planar power MOS) SIPMOS (Small Signal Power MOSFET)
Drain-Source Breakdown Voltage (V(BR)DSS) 240 V (VGS=0, ID=250 µA) —
Continuous Drain Current (ID) at Ta=25°C 0.35 A —
Total Power Dissipation (Ptot) at Ta=25°C 1.8 W (on FR4 PCB, 6 cm² cooling area) —
On-State Resistance (RDS(on)) max 6 Ω (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typical value]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Rentang Suhu Kerja -55 °C to +150 °C (Tj) —
Thermal Resistance Junction-Ambient (RthJA) 70 K/W (6 cm² PCB) —
Thermal Resistance Junction-Solder Point (RthJS) 25 K/W —
Paket PG-SOT223-4 (SOT-223, 4-pin with tab) PG-SOT223-4 (SOT-223-3 + tab)
Tipe Mounting Surface Mount Surface Mount
Logic-Level Gate Drive Yes (logic-level compatible) —
dv/dt Rated Yes —
ESD Protection Internal gate-source Zener —
Automotive Qualification AEC-Q101 (per ordering code H6327) —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSP125H6327XTSA1
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) — 120 mA (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Suhu Kerja — -55C to +150C (TJ)
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Configuration — Single
Channel Mode — Enhancement
Level MSL — 1 (Unlimited)
Qualification — Automotive / Industrial grade

Spek dan Sumber

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