BSP89H6327XTSA1 vs BSP125H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP89H6327XTSA1 disebabkan oleh Infineon dan BSP125H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP89H6327XTSA1 BSP125H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET, enhancement mode N-Channel MOSFET
Technology SIPMOS (planar power MOS) SIPMOS (Small Signal Power MOSFET)
Drain-Source Breakdown Voltage (V(BR)DSS) 240 V (VGS=0, ID=250 µA) —
Continuous Drain Current (ID) at Ta=25°C 0.35 A —
Total Power Dissipation (Ptot) at Ta=25°C 1.8 W (on FR4 PCB, 6 cm² cooling area) —
On-State Resistance (RDS(on)) max 6 Ω (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typical value]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gambaran Suhu Operasi -55 °C to +150 °C (Tj) —
Thermal Resistance Junction-Ambient (RthJA) 70 K/W (6 cm² PCB) —
Thermal Resistance Junction-Solder Point (RthJS) 25 K/W —
Kemasan PG-SOT223-4 (SOT-223, 4-pin with tab) PG-SOT223-4 (SOT-223-3 + tab)
Jenis Pemasangan Surface Mount Surface Mount
Logic-Level Gate Drive Yes (logic-level compatible) —
dv/dt Rated Yes —
ESD Protection Internal gate-source Zener —
Automotive Qualification AEC-Q101 (per ordering code H6327) —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSP125H6327XTSA1
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) — 120 mA (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Suhu Operasi — -55C to +150C (TJ)
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Configuration — Single
Channel Mode — Enhancement
Aras MSL — 1 (Unlimited)
Qualification — Automotive / Industrial grade

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga