BSP89H6327XTSA1 vs BSP125H6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSP89H6327XTSA1 sa pamamagitan ng Infineon at BSP125H6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSP125H6327XTSA1 - 600V 120mA N-Ch SIPMOS | SOT-223 | Infineon
BSP125H6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSP89H6327XTSA1 | BSP125H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET, enhancement mode | N-Channel MOSFET |
| Technology | SIPMOS (planar power MOS) | SIPMOS (Small Signal Power MOSFET) |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 240 V (VGS=0, ID=250 µA) | — |
| Continuous Drain Current (ID) at Ta=25°C | 0.35 A | — |
| Total Power Dissipation (Ptot) at Ta=25°C | 1.8 W (on FR4 PCB, 6 cm² cooling area) | — |
| On-State Resistance (RDS(on)) max | 6 Ω (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typical value] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (Tj) | — |
| Thermal Resistance Junction-Ambient (RthJA) | 70 K/W (6 cm² PCB) | — |
| Thermal Resistance Junction-Solder Point (RthJS) | 25 K/W | — |
| Packhaging | PG-SOT223-4 (SOT-223, 4-pin with tab) | PG-SOT223-4 (SOT-223-3 + tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (logic-level compatible) | — |
| dv/dt Rated | Yes | — |
| ESD Protection | Internal gate-source Zener | — |
| Automotive Qualification | AEC-Q101 (per ordering code H6327) | — |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSP125H6327XTSA1 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) | — | 120 mA (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Temperature na Operasyon | — | -55C to +150C (TJ) |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Configuration | — | Single |
| Channel Mode | — | Enhancement |
| Level ng MSL | — | 1 (Unlimited) |
| Qualification | — | Automotive / Industrial grade |