BSZ031NE2LS5ATMA1 vs IRLH5030TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ031NE2LS5ATMA1 disebabkan oleh Infineon dan IRLH5030TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ031NE2LS5ATMA1 IRLH5030TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number BSZ031NE2LS5ATMA1 IRLH5030TRPBF
Technology / Platform OptiMOS 5 25V/30V N-channel trench MOSFET —
Drain-Source Voltage (VDS) max 25 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta=25C 19 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
RDS(on) max @ VGS=10 V 3.1 mOhm —
RDS(on) typical @ VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Power Dissipation at Ta=25C 2.1 W —
Power Dissipation at Tc=25C 30 W —
Suhu Hubungan Operasi -55 C to +150 C —
Kemasan PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PQFN-8 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL] —
Status RoHS Compliant —
Lead-Free Yes —
Boson Bebas Yes —
FET Type — N-Channel
Technology — IR MOSFET (HEXFET)
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TA=25C — 13 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 9 mOhm
Total Gate Charge (Qg) — 44 nC
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)
Power Dissipation at TA=25C — 3.6 W
Power Dissipation at TC=25C — 156 W
Thermal Resistance to PCB (RthJC) — 0.8 C/W
Profile Height — ≤ 0.9 mm
Qualification — JEDEC standard
Rg Tested — 100%
RoHS Compliance — Compliant (Lead-free, Bromide-free, Halogen-free)
Industry-Standard Pinout — Yes

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