BSZ031NE2LS5ATMA1 vs IRLH5030TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ031NE2LS5ATMA1 sa pamamagitan ng Infineon at IRLH5030TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSZ031NE2LS5ATMA1 | IRLH5030TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | BSZ031NE2LS5ATMA1 | IRLH5030TRPBF |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | — |
| Drain-Source Voltage (VDS) max | 25 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta=25C | 19 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | — |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 30 W | — |
| Temperature ng Junction na Operasyon | -55 C to +150 C | — |
| Packhaging | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PQFN-8 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL] | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| FET Type | — | N-Channel |
| Technology | — | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TA=25C | — | 13 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 9 mOhm |
| Total Gate Charge (Qg) | — | 44 nC |
| Gate Drive Voltage (optimized) | — | 10 V (capable of 4.5 V) |
| Power Dissipation at TA=25C | — | 3.6 W |
| Power Dissipation at TC=25C | — | 156 W |
| Thermal Resistance to PCB (RthJC) | — | 0.8 C/W |
| Profile Height | — | ≤ 0.9 mm |
| Qualification | — | JEDEC standard |
| Rg Tested | — | 100% |
| RoHS Compliance | — | Compliant (Lead-free, Bromide-free, Halogen-free) |
| Industry-Standard Pinout | — | Yes |