BSZ065N06LS5ATMA1 vs BSZ036NE2LSATMA1 Perbandingan

Perbandingan bersamaan detil BSZ065N06LS5ATMA1 dari Infineon dan BSZ036NE2LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ065N06LS5ATMA1 BSZ036NE2LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 5 —
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS™ 5 logic-level —
Drain-Source Voltage (VDS) Max 60 V —
Continuous Drain Current (ID) Max 65 A —
Drain Current @ Tc (ID, Tc=25°C) 40 A —
On-Resistance RDS(on) Max @ VGS=10V 6.5 mΩ —
Power Dissipation (PD) Max 46 W —
Gate Threshold Voltage (VGS(th)) 2.3 V —
Total Gate Charge (Qg) 13 nC @ VGS=4.5 V —
Input Capacitance (Ciss) 1.8 nF —
Rentang Suhu Kerja -55°C to +150°C -55C to +150C
Paket PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TSDSON-8-FL (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Product Family — OptiMOS 25V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) at TA=25C — 16 A
Continuous Drain Current (ID) at TC=25C — 40 A
Power Dissipation (PD) at TA=25C — 2.1 W
Power Dissipation (PD) at TC=25C — 37 W
Configuration — Single
Level MSL — 1 (Unlimited)
Lead-Free — Yes
Gate Drive — Logic-level compatible

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