BSZ0901NSIATMA1 vs BSG0813NDIATMA1 Perbandingan

Perbandingan bersamaan detil BSZ0901NSIATMA1 dari Infineon dan BSG0813NDIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ0901NSIATMA1 BSG0813NDIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0901NSIATMA1 —
Series OptiMOS 25V OptiMOS 5 Power Block
Technology OptiMOS trench N-channel MOSFET —
FET Type N-Channel N-Channel MOSFET Array (half-bridge / synchronous buck)
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID) at Ta=25C 25 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 69 W —
Paket PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) PG-TISON-8 (5.0 x 6.0 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) value]
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) max @ VGS=4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] [DATA_NEEDED: Qg total]
Rentang Suhu Kerja -55 C to +150 C (typical MOSFET range) [DATA_NEEDED: operating temperature range]
Packaging Tape & Reel (ATMA1 suffix = 13-inch reel) —
Status RoHS Compliant Compliant
Configuration — High-side + Low-side, integrated
Low-Side Continuous Drain Current (ID) — 19 A
High-Side Continuous Drain Current (ID) — 33 A
Power Dissipation (PD) — 2.5 W
RDS(on) - Low-Side — [DATA_NEEDED: RDS(on) low-side @ VGS]
RDS(on) - High-Side — [DATA_NEEDED: RDS(on) high-side @ VGS]
Technology Generation — OptiMOS 5
Level MSL — 1 (per JEDEC J-STD-020)
Topologi — Synchronous buck half-bridge

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