BTS621L1E3128ABUMA1 vs BTS5215LAUMA1 Comparison
Detailed side-by-side comparison of BTS621L1E3128ABUMA1 by Infineon and BTS5215LAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΞ© PROFET | Infineon
BTS621L1E3128ABUMA1 β Active
Specification Comparison
| Parameter | BTS621L1E3128ABUMA1 | BTS5215LAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.45 | $1.18 |
| Product Type | Dual-channel smart high-side power switch (PROFET) | Smart High-Side Power Switch |
| Number of Channels | 2 (dual high-side, 1:1) | 2 |
| FET Topology | N-Channel vertical power MOSFET with charge pump | β |
| On-State Resistance Rds(on) | 8 mΞ© typical per channel | β |
| Nominal Operating Voltage | 12 V (automotive bus) | β |
| Maximum Supply Voltage | 24 V (load-dump survivable) | β |
| Continuous Load Current | 4.4 A per channel | β |
| Operating Temperature Range | -40 Β°C to +150 Β°C junction | β |
| Package | PG-TO263-7-2 (D2PAK-7, exposed tab) | PG-DSO-12-9 |
| Mounting Type | Surface Mount | β |
| Input Logic Compatibility | CMOS-compatible, ground-referenced | CMOS-compatible, ground-referenced |
| Diagnostic Feedback | Yes - open-load and overtemperature reporting | Status feedback per channel |
| Embedded Protection | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery | β |
| Technology | Smart SIPMOS (monolithic) | β |
| RoHS / Lead-Free | Compliant (Pb-free) | β |
| On-State Resistance (RDS(on)) | β | 90 mΞ© typical per channel |
| Continuous Output Current per Channel | β | 3.7 A |
| Operating Voltage Range | β | 8 V to 36 V |
| Standby Current | β | Very low (datasheet value [DATA_NEEDED: standby current uA]) |
| MOSFET Technology | β | N-channel vertical power MOSFET with charge pump |
| Load Type Support | β | Resistive and inductive loads |
| Protection Features | β | Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage |
| Demagnetization | β | Fast demagnetization of inductive loads |
| Operating Temperature | β | -40C to +150C (TJ) [DATA_NEEDED: ambient range exact] |
| RoHS Status | β | Compliant |